FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 644/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR3706TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 75A DPAK	In Stock464 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V	FET Feature: -	Power Dissipation (Max): 88W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3706TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 75A DPAK	In Stock397 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V	FET Feature: -	Power Dissipation (Max): 88W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A DPAK	In Stock645 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V	FET Feature: -	Power Dissipation (Max): 87W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A DPAK	In Stock355 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V	FET Feature: -	Power Dissipation (Max): 87W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A DPAK	In Stock204 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V	FET Feature: -	Power Dissipation (Max): 87W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3708TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A DPAK	In Stock410 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V	Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V	FET Feature: -	Power Dissipation (Max): 87W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3708TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A DPAK	In Stock344 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V	Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V	FET Feature: -	Power Dissipation (Max): 87W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3708TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A DPAK	In Stock373 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V	Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V	FET Feature: -	Power Dissipation (Max): 87W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3711TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A DPAK	In Stock579 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 120W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3711TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A DPAK	In Stock466 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 120W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3711TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A DPAK	In Stock404 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 120W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5410TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 13A DPAK	In Stock417 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V	FET Feature: -	Power Dissipation (Max): 66W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5410TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 13A DPAK	In Stock560 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V	FET Feature: -	Power Dissipation (Max): 66W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5410TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 13A DPAK	In Stock344 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V	FET Feature: -	Power Dissipation (Max): 66W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9N20DTR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9.4A DPAK	In Stock613 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V	FET Feature: -	Power Dissipation (Max): 86W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9N20DTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9.4A DPAK	In Stock360 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V	FET Feature: -	Power Dissipation (Max): 86W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9N20DTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9.4A DPAK	In Stock573 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V	FET Feature: -	Power Dissipation (Max): 86W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS17N20DTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 16A D2PAK	In Stock572 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 16A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 140W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS17N20DTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 16A D2PAK	In Stock353 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 16A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 140W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ44RSTRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A D2PAK	In Stock433 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ44VSTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 55A D2PAK	In Stock253 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1812pF @ 25V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ44VSTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 55A D2PAK	In Stock520 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1812pF @ 25V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ46L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 50A D2PAK	In Stock480 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3714STR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 36A D2PAK	In Stock278 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3714STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 36A D2PAK	In Stock486 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3714STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 36A D2PAK	In Stock452 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3714TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 36A TO-220AB	In Stock286 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL3715STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 54A D2PAK	In Stock434 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3715STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 54A D2PAK	In Stock423 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3715TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 54A TO-220AB	In Stock331 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 71W (Tc)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3