FETs, MOSFETs - Single

Manufacturer

Reset

Series

Reset

FET Type

Reset

Technology

Reset

Drain to Source Voltage (Vdss)

Reset

Current - Continuous Drain (Id) @ 25°C

Reset

Drive Voltage (Max Rds On, Min Rds On)

Reset

Rds On (Max) @ Id, Vgs

Reset

Vgs(th) (Max) @ Id

Reset

Gate Charge (Qg) (Max) @ Vgs

Reset

Vgs (Max)

Reset

Input Capacitance (Ciss) (Max) @ Vds

Reset

FET Feature

Reset

Power Dissipation (Max)

Reset

Operating Temperature

Reset

Mounting Type

Reset

Supplier Device Package

Reset

Package / Case

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 603/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NDP4050	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 15A TO220	In Stock525 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NDP4050L	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 15A TO-220	In Stock508 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NDP4060	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO-220	In Stock194 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NDP4060L	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO-220	In Stock306 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NDP603AL	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A TO-220AB	In Stock413 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NDP7050	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 75A TO-220AB	In Stock347 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NDP7050L	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 75A TO-220AB	In Stock384 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 15mOhm @ 37.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NDP7060L	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 75A TO-220	In Stock306 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 15mOhm @ 37.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
BSS100	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 220MA TO92	In Stock422 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 6Ohm @ 220mA, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BSS110	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 170MA TO92	In Stock361 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 10Ohm @ 170mA, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
NDF0610	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 180MA TO92	In Stock596 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA)
NDS352P	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.85A SSOT3	In Stock180 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT-3	Package / Case: TO-236-3, SC-59, SOT-23-3
NDS356P	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.1A SSOT-3	In Stock384 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 1.3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT-3	Package / Case: TO-236-3, SC-59, SOT-23-3
NDC651N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.2A SSOT6	In Stock277 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
NDC652P	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.4A SSOT6	In Stock426 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): -20V	Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
NDH8436	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A SOT-8	In Stock507 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-8	Package / Case: 8-LSOP (0.130", 3.30mm Width)
NDH8447	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH -30V SOT-8	In Stock686 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-8	Package / Case: 8-LSOP (0.130", 3.30mm Width)
NDT451N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.5A SOT-223-4	In Stock196 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: SOT-223-4	Package / Case: TO-261-4, TO-261AA
NDT453N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8A SOT-223-4	In Stock401 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 15V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223-4	Package / Case: TO-261-4, TO-261AA
NDT455N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11.5A SOT-223	In Stock452 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223-4	Package / Case: TO-261-4, TO-261AA
NDT452P	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3A SOT-223-4	In Stock537 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: SOT-223-4	Package / Case: TO-261-4, TO-261AA
NDS8410	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8-SOIC	In Stock598 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NDS9410A	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.3A 8-SOIC	In Stock635 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 7.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NDS8435	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7A 8-SOIC	In Stock357 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NDS9400A	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3.4A 8-SOIC	In Stock282 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NDS9405	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.3A 8-SOIC	In Stock387 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NDS9430	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.3A 8-SOIC	In Stock277 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NDS9435A	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.3A 8-SOIC	In Stock295 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
94-2304	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 116A TO-220AB	In Stock434 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 116A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V	FET Feature: -	Power Dissipation (Max): 180W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL3803	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 140A TO-220AB	In Stock462 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3