FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 595/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK9832-55A,115	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 12A SOT223	In Stock534 More on Order	Manufacturer: NXP USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V	FET Feature: -	Power Dissipation (Max): 8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
PH6530AL,115	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V LFPAK	In Stock314 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
BUK95150-55A,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 13A TO220AB	In Stock131 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 339pF @ 25V	FET Feature: -	Power Dissipation (Max): 53W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHT4NQ10LT,135	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3.5A SC73	In Stock181 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 250mOhm @ 1.75A, 5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 374pF @ 25V	FET Feature: -	Power Dissipation (Max): 6.9W (Tc)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
BUK6207-30C,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 90A DPAK	In Stock628 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 54.8nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V	FET Feature: -	Power Dissipation (Max): 128W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7C10-75AITE,118	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 75A D2PAK	In Stock435 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V	FET Feature: Current Sensing	Power Dissipation (Max): 272W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7909-75AIE,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 75A TO220AB	In Stock602 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V	FET Feature: Current Sensing	Power Dissipation (Max): 272W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-5	Package / Case: TO-220-5
BUK9520-100B,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 63A TO220AB	In Stock576 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 63A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 18.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 53.4nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 5657pF @ 25V	FET Feature: -	Power Dissipation (Max): 203W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK9512-55B,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB	In Stock601 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3693pF @ 25V	FET Feature: -	Power Dissipation (Max): 157W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK9509-40B,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB	In Stock327 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 157W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK7880-55,135	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 3.5A SOT223	In Stock453 More on Order	Manufacturer: NXP USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
BUK7513-75B,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 75A TO220AB	In Stock469 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 25V	FET Feature: -	Power Dissipation (Max): 157W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK7509-55A,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB	In Stock602 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3271pF @ 25V	FET Feature: -	Power Dissipation (Max): 211W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHD3055E,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 10.3A DPAK	In Stock475 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): 33W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PMF780SN,115	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 570MA SOT323	In Stock337 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 570mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V	FET Feature: -	Power Dissipation (Max): 560mW (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323-3	Package / Case: SC-70, SOT-323
BSP030,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10A SOT223	In Stock185 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 24V	FET Feature: -	Power Dissipation (Max): 8.3W (Tc)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-73	Package / Case: TO-261-4, TO-261AA
TPCC8002-H(TE12L,Q	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8TSON	In Stock378 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSV-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 22A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V	FET Feature: -	Power Dissipation (Max): 700mW (Ta), 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-TSON Advance (3.3x3.3)	Package / Case: 8-PowerVDFN
PSMN1R7-25YLC,115	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A LFPAK	In Stock440 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 1.95V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3735pF @ 12V	FET Feature: -	Power Dissipation (Max): 164W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
BUK9E06-55A,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A I2PAK	In Stock531 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK752R3-40C,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220AB	In Stock598 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11323pF @ 25V	FET Feature: -	Power Dissipation (Max): 333W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PH6030L,115	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 76.7A LFPAK	In Stock347 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.15V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 12V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
PH4330L,115	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 95.9A LFPAK	In Stock287 More on Order	Manufacturer: NXP USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 95.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
PH2525L,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A LFPAK	In Stock496 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.15V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 34.7nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4470pF @ 12V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
BUK9E3R2-40B,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A I2PAK	In Stock609 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 94nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9610-55A,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A D2PAK	In Stock494 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 4307pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9607-30B,118	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK	In Stock192 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3373pF @ 25V	FET Feature: -	Power Dissipation (Max): 157W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK952R8-30B,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO220AB	In Stock169 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 10185pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK9520-100A,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 63A TO220AB	In Stock288 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 63A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 6385pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
BUK7E04-40A,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A I2PAK	In Stock382 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7510-55AL,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB	In Stock171 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6280pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3