Top

FETs, MOSFETs - Single

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 580/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STD100NH03LT4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 60A DPAK

In Stock479

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ III
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 15V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD110NH02LT4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 24V 80A DPAK

In Stock399

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ III
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 15V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD12NF06-1
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 12A IPAK

In Stock353

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
STD2NM60T4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 2A DPAK

In Stock410

More on Order

Manufacturer: STMicroelectronics
Series: MDmesh™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD30NE06L
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 30A DPAK

In Stock370

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD30NE06LT4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 30A DPAK

In Stock470

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NM50T4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 3A DPAK

In Stock606

More on Order

Manufacturer: STMicroelectronics
Series: MDmesh™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD60NH03LT4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 60A DPAK

In Stock260

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ III
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD90NH02LT4
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 24V 60A DPAK

In Stock342

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STF12PF06
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 8A TO-220FP

In Stock468

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
FET Feature: -
Power Dissipation (Max): 225W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STF8NK85Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 850V 6.7A TO-220FP

In Stock406

More on Order

Manufacturer: STMicroelectronics
Series: SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STN2NE10
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 2A SOT-223

In Stock269

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
STN2NE10L
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 1.8A SOT-223

In Stock612

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
STP120NF04
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A TO-220

In Stock130

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP12NM50FD
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 12A TO-220

In Stock281

More on Order

Manufacturer: STMicroelectronics
Series: FDmesh™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP14NK60Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 13.5A TO-220

In Stock631

More on Order

Manufacturer: STMicroelectronics
Series: SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP16NF06FP
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 11A TO-220FP

In Stock372

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STP16NS25FP
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 16A TO-220FP

In Stock463

More on Order

Manufacturer: STMicroelectronics
Series: MESH OVERLAY™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STP20NM50FP
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 20A TO-220FP

In Stock418

More on Order

Manufacturer: STMicroelectronics
Series: MDmesh™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
STP22NF03L
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 22A TO-220

In Stock416

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP22NS25Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 22A TO-220

In Stock613

More on Order

Manufacturer: STMicroelectronics
Series: MESH OVERLAY™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
FET Feature: -
Power Dissipation (Max): 135W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP3HNK90Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 3A TO-220

In Stock318

More on Order

Manufacturer: STMicroelectronics
Series: SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP45NF3LL
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 45A TO-220

In Stock302

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP60NE06L-16
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 60A TO-220

In Stock334

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP60NF03L
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 60A TO-220

In Stock455

More on Order

Manufacturer: STMicroelectronics
Series: STripFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 25V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP6NK70Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 700V 5A TO-220

In Stock416

More on Order

Manufacturer: STMicroelectronics
Series: SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP7NK30Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 5A TO-220

In Stock474

More on Order

Manufacturer: STMicroelectronics
Series: SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP80NE03L-06
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A TO220

In Stock307

More on Order

Manufacturer: STMicroelectronics
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP8NK85Z
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 850V 6.7A TO-220

In Stock338

More on Order

Manufacturer: STMicroelectronics
Series: SuperMESH™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
STP8NM50
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 8A TO-220

In Stock517

More on Order

Manufacturer: STMicroelectronics
Series: MDmesh™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 25V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3