FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 562/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPW60R017C7XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW	In Stock240 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPW60R018CFD7XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW	In Stock308 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IXFT40N50Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 40A TO-268	In Stock575 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXTK160N20	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 160A TO-264	In Stock238 More on Order	Manufacturer: IXYS	Series: MegaMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 415nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V	FET Feature: -	Power Dissipation (Max): 730W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264 (IXTK)	Package / Case: TO-264-3, TO-264AA
IXTH06N220P3HV	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock279 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 2200V	Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 80Ohm @ 300mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247HV	Package / Case: TO-247-3 Variant
APT60N60SCSG/TR	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 60A D3PAK	In Stock533 More on Order	Manufacturer: Microsemi Corporation	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 3mA	Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V	FET Feature: Super Junction	Power Dissipation (Max): 431W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTK33N50	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 33A TO-264	In Stock375 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 33A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V	FET Feature: -	Power Dissipation (Max): 416W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264 (IXTK)	Package / Case: TO-264-3, TO-264AA
IXFR32N100P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 18A ISOPLUS247	In Stock590 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 6.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 25V	FET Feature: -	Power Dissipation (Max): 320W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXKR47N60C5	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A ISOPLUS247	In Stock400 More on Order	Manufacturer: IXYS	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 47A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 3mA	Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V	FET Feature: Super Junction	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXTH24N50L	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 24A TO-247	In Stock449 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 20V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 20V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
APT41M80B2	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 43A T-MAX	In Stock505 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 43A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V	FET Feature: -	Power Dissipation (Max): 1040W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: T-MAX™ [B2]	Package / Case: TO-247-3 Variant
IXFK44N50Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 44A TO-264AA	In Stock329 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA
NVHL025N65S3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 75A	In Stock632 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 37.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 3mA	Gate Charge (Qg) (Max) @ Vgs: 236nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 400V	FET Feature: -	Power Dissipation (Max): 595W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IPZ60R017C7XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW	In Stock426 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IXFX80N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 80A PLUS247	In Stock436 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V	FET Feature: -	Power Dissipation (Max): 1040W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS247™-3	Package / Case: TO-247-3
APT97N65LC6	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 97A TO-264	In Stock235 More on Order	Manufacturer: Microsemi Corporation	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 97A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 2.96mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V	FET Feature: -	Power Dissipation (Max): 862W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264 [L]	Package / Case: TO-264-3, TO-264AA
IXFR230N20T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 156A ISOPLUS247	In Stock512 More on Order	Manufacturer: IXYS	Series: GigaMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 156A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V	Vgs(th) (Max) @ Id: 5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V	FET Feature: -	Power Dissipation (Max): 600W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: TO-247-3
IXKH47N60C	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO-247	In Stock517 More on Order	Manufacturer: IXYS	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 47A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 2mA	Gate Charge (Qg) (Max) @ Vgs: 650nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: Super Junction	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AD (IXKH)	Package / Case: TO-247-3
IXFR12N100Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 10A ISOPLUS247	In Stock387 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 6A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V	FET Feature: -	Power Dissipation (Max): 250W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
APT38F80B2	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 41A T-MAX	In Stock193 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 41A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V	FET Feature: -	Power Dissipation (Max): 1040W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: T-MAX™ [B2]	Package / Case: TO-247-3 Variant
PCFD18N20W	MICROSS/On Semiconductor	Transistors - FETs, MOSFETs - Single DIE MOSFET N-CH 200V UNIFET	In Stock511 More on Order	Manufacturer: MICROSS/On Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IXFX20N120	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 20A ISOPLUS247	In Stock538 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 750mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS247™-3	Package / Case: TO-247-3
IXFR48N50Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 40A ISOPLUS247	In Stock131 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V	FET Feature: -	Power Dissipation (Max): 310W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXTK110N30	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 110A TO-264	In Stock358 More on Order	Manufacturer: IXYS	Series: MegaMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V	FET Feature: -	Power Dissipation (Max): 730W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264 (IXTK)	Package / Case: TO-264-3, TO-264AA
IXFK48N50	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A TO-264AA	In Stock353 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA
IXFK48N50Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A TO-264	In Stock533 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA
IXFT150N25X3HV	IXYS	Transistors - FETs, MOSFETs - Single 250V/150A ULTRA JUNCTION X3-CLAS	In Stock548 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 150A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268HV	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFK20N120	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 20A TO-264	In Stock191 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 750mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA
IXFX27N80Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 27A PLUS 247	In Stock284 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 27A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS247™-3	Package / Case: TO-247-3
IXFK150N10	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 150A TO-264AA	In Stock667 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 150A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA