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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 544/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTV98N20T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 98A PLUS220	In Stock120 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 98A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFA18N60X	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A TO-263AA	In Stock505 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1.5mA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V	FET Feature: -	Power Dissipation (Max): 320W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263AA	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPW80R290C3AFKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO247	In Stock453 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPW80R290C3AXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single AUTOMOTIVE	In Stock211 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 100V	FET Feature: -	Power Dissipation (Max): 227W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-3	Package / Case: TO-247-3
IXTV102N25T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 102A PLUS220	In Stock322 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 102A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV130N15T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 130A PLUS220	In Stock204 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 130A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV72N30T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 72A PLUS220	In Stock622 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 72A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTT26N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A TO-268	In Stock528 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFH12N100P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 12A TO-247	In Stock446 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V	FET Feature: -	Power Dissipation (Max): 463W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AD (IXFH)	Package / Case: TO-247-3
IXTQ30N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A TO-3P	In Stock216 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IXTQ26N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A TO-3P	In Stock428 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IXTT110N10P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 110A TO-268	In Stock496 More on Order	Manufacturer: IXYS	Series: PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFV16N80P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 16A PLUS220	In Stock191 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 16A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFT14N80P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 14A TO-268	In Stock400 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
AOK53S60L	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 53A TO247	In Stock591 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: aMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 53A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3034pF @ 100V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
AOK53S60	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock412 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: aMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 53A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3034pF @ 100V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
IXFH230N10T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 230A TO-247	In Stock265 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 230A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15300pF @ 25V	FET Feature: -	Power Dissipation (Max): 650W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AD (IXFH)	Package / Case: TO-247-3
IPP60R074C6XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 57.7A TO220	In Stock529 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 57.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 74mOhm @ 21A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1.4mA	Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 100V	FET Feature: -	Power Dissipation (Max): 480.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3	Package / Case: TO-220-3
FCH47N60-F133	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO-247	In Stock364 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
APT11F80B	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A TO-247	In Stock306 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2471pF @ 25V	FET Feature: -	Power Dissipation (Max): 337W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247 [B]	Package / Case: TO-247-3
IXTH3N120	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 3A TO-247	In Stock626 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
IXTQ470P2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 42A TO3P	In Stock317 More on Order	Manufacturer: IXYS	Series: PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V	FET Feature: -	Power Dissipation (Max): 830W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IXTP32P20T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 32A TO-220	In Stock351 More on Order	Manufacturer: IXYS	Series: TrenchP™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 32A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTH60N15	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 60A TO-247	In Stock359 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V	FET Feature: -	Power Dissipation (Max): 275W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
IXFA130N15X3	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock565 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 130A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1.5mA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V	FET Feature: -	Power Dissipation (Max): 390W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263AA	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFH160N15T2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 160A TO-247	In Stock278 More on Order	Manufacturer: IXYS	Series: GigaMOS™, HiPerFET™, TrenchT2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 253nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V	FET Feature: -	Power Dissipation (Max): 880W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AD (IXFH)	Package / Case: TO-247-3
IXTP20N65X	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20A TO-220	In Stock186 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V	FET Feature: -	Power Dissipation (Max): 320W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
IXFT30N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A TO-268 D3	In Stock402 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFT26N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A TO-268 D3	In Stock256 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXKC20N60C	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A ISOPLUS220	In Stock275 More on Order	Manufacturer: IXYS	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 190mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS220™	Package / Case: ISOPLUS220™