FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 540/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPT210N25NFDATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MV POWER MOS	In Stock564 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IXFH76N15T2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock400 More on Order	Manufacturer: IXYS	Series: HiPerFET™, TrenchT2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 76A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 22mOhm @ 38A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V	FET Feature: -	Power Dissipation (Max): 350W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
IXTA34N65X2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock460 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 34A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263AA	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB407N30NATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-3	In Stock499 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 4V @ 270µA	Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTH22N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO-247	In Stock306 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V	FET Feature: -	Power Dissipation (Max): 350W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
IXFP3N80	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3.6A TO-220	In Stock557 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXFQ14N80P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 14A TO-3P	In Stock329 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
FDA8440	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO-3PN	In Stock342 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 24740pF @ 25V	FET Feature: -	Power Dissipation (Max): 306W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3PN	Package / Case: TO-3P-3, SC-65-3
IPL60R060CFD7AUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW	In Stock318 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
R6015ENZC8	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO3PF	In Stock676 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V	FET Feature: -	Power Dissipation (Max): 120W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3PF	Package / Case: TO-3P-3 Full Pack
IXFP230N075T2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 230A	In Stock614 More on Order	Manufacturer: IXYS	Series: HiPerFET™, TrenchT2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 230A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTH120N15T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 120A TO-247	In Stock460 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
IXTH60N30T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 60A TO-247	In Stock172 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
IXTH96N25T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 96A TO-247	In Stock420 More on Order	Manufacturer: IXYS	Series: TrenchHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 96A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V	FET Feature: -	Power Dissipation (Max): 625W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
IXTH98N20T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 98A TO-247	In Stock180 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 98A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-247 (IXTH)	Package / Case: TO-247-3
IXFA30N60X	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO-263	In Stock568 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK16C60W,S1VQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15.8A I2PAK	In Stock404 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 790µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V	FET Feature: -	Power Dissipation (Max): 130W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IXFQ26N50P3	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A TO-3P	In Stock594 More on Order	Manufacturer: IXYS	Series: HiPerFET™, Polar3™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
TK31V60W,LVQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 30.8A 5DFN	In Stock155 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 1.5mA	Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V	FET Feature: Super Junction	Power Dissipation (Max): 240W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-DFN-EP (8x8)	Package / Case: 4-VSFN Exposed Pad
IXTQ22N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO-3P	In Stock378 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IXTQ110N10P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 110A TO-3P	In Stock431 More on Order	Manufacturer: IXYS	Series: PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IXTQ150N06P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 150A TO-3P	In Stock271 More on Order	Manufacturer: IXYS	Series: PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 150A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
FCH35N60	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 35A TO-247	In Stock233 More on Order	Manufacturer: ON Semiconductor	Series: SuperMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V	FET Feature: -	Power Dissipation (Max): 312.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IXTP02N50D	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 0.2A TO-220	In Stock421 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V	Vgs(th) (Max) @ Id: 5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V	FET Feature: Depletion Mode	Power Dissipation (Max): 1.1W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXKP24N60C5M	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8.5A TO220FP	In Stock169 More on Order	Manufacturer: IXYS	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 790µA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V	FET Feature: Super Junction	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220ABFP	Package / Case: TO-220-3 Full Pack, Isolated Tab
IXFP7N100P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 7A TO-220	In Stock328 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 6V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRFBF30	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 3.6A TO-220AB	In Stock540 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRFP460PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single PLANAR >= 100V	In Stock503 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V	FET Feature: -	Power Dissipation (Max): 280W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AC	Package / Case: TO-247-3
IPZ65R095C7XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO247-4	In Stock302 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ C7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 590µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V	FET Feature: -	Power Dissipation (Max): 128W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-4	Package / Case: TO-247-4
AUIRFP4004	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 350A TO-247AC	In Stock423 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 195A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V	FET Feature: -	Power Dissipation (Max): 380W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AC	Package / Case: TO-247-3