FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 505/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF840LPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO-262	In Stock477 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263AB	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK40E10K3,S1X(S	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 40A TO-220AB	In Stock462 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NTMFS5C612NLWFT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 235A 5DFN	In Stock403 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 235A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 167W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
SI4368DY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17A 8-SOIC	In Stock542 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
VP2206N3-G-P003	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 640MA TO92-3	In Stock375 More on Order	Manufacturer: Microchip Technology	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 10mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V	FET Feature: -	Power Dissipation (Max): 740mW (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TK15A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 15A TO-220SIS	In Stock409 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
IRFI3306GPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 71A TO220	In Stock519 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 71A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V	Vgs(th) (Max) @ Id: 4V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 50V	FET Feature: -	Power Dissipation (Max): 46W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3 Full Pack
IPB50R199CPATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 17A TO-263	In Stock285 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 550V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 660µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V	FET Feature: -	Power Dissipation (Max): 139W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CSD17556Q5BT	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A 8VSON	In Stock555 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.4mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 1.65V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 191W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-VSON-CLIP (5x6)	Package / Case: 8-PowerTDFN
IPB100N08S2L07ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A TO263-3	In Stock378 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB100N08S207ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A TO263-3	In Stock513 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOT460	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 85A TO-220	In Stock530 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 85A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 30V	FET Feature: -	Power Dissipation (Max): 268W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
TK7A60W,S4VX	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 7A TO-220SIS	In Stock524 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 350µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V	FET Feature: Super Junction	Power Dissipation (Max): 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
IXTP2N65X2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 2A X2 TO-220	In Stock279 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V	FET Feature: -	Power Dissipation (Max): 55W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
IXTP4N65X2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 4A X2 TO-220	In Stock129 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
CSD18542KCS	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200A TO220-3	In Stock557 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 200A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 44mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NTMFS5C410NLTWFT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 312A SO8FL	In Stock266 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 167W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
IPB65R190CFDATMA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY	In Stock560 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ CFD2	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 700µA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V	FET Feature: -	Power Dissipation (Max): 151W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z10	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 6.7A TO220AB	In Stock516 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V	FET Feature: -	Power Dissipation (Max): 43W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IPA60R210CFD7XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single LOW POWER_NEW	In Stock553 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPP60R210CFD7XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single LOW POWER_NEW	In Stock568 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMJ65H650SCTI	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 501V-650V ITO-220A	In Stock524 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
TK10A60W,S4X	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 9.7A TO-220	In Stock292 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 300V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3 Full Pack
IPB180N04S4L01ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-7	In Stock490 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 140µA	Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V	Vgs (Max): +20V, -16V	Input Capacitance (Ciss) (Max) @ Vds: 19100pF @ 25V	FET Feature: -	Power Dissipation (Max): 188W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-7-3	Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
CSD18502KCS	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3	In Stock551 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 20V	FET Feature: -	Power Dissipation (Max): 259W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
AOB482L	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V D2PAK	In Stock369 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: SDMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 7V, 10V	Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 40V	FET Feature: -	Power Dissipation (Max): 2.1W (Ta), 333W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK8Q65W,S1Q	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7.8A IPAK	In Stock456 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 300µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Stub Leads, IPak
TK7Q60W,S1VQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A IPAK-3	In Stock280 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 350µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Stub Leads, IPak
IXFA10N60P-TRL	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A D2-PAK	In Stock274 More on Order	Manufacturer: IXYS	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
FCPF125N65S3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A TO220F	In Stock298 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 2.4mA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 400V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack