FETs, MOSFETs - Single

Manufacturer

Reset

Series

Reset

FET Type

Reset

Technology

Reset

Drain to Source Voltage (Vdss)

Reset

Current - Continuous Drain (Id) @ 25°C

Reset

Drive Voltage (Max Rds On, Min Rds On)

Reset

Rds On (Max) @ Id, Vgs

Reset

Vgs(th) (Max) @ Id

Reset

Gate Charge (Qg) (Max) @ Vgs

Reset

Vgs (Max)

Reset

Input Capacitance (Ciss) (Max) @ Vds

Reset

FET Feature

Reset

Power Dissipation (Max)

Reset

Operating Temperature

Reset

Mounting Type

Reset

Supplier Device Package

Reset

Package / Case

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 493/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7413PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC	In Stock485 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRLR2905ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A DPAK	In Stock635 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3007STRLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 75V 62A D2PAK	In Stock547 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 62A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V	FET Feature: -	Power Dissipation (Max): 120W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRF7648M2TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 179A DIRECTFET	In Stock377 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V	Vgs(th) (Max) @ Id: 4.9V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 63W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ M4	Package / Case: DirectFET™ Isometric M4
FCB260N65S3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 260MOHM D2PAK	In Stock265 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1.2mA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V	FET Feature: -	Power Dissipation (Max): 90W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTMFS5C410NLT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 46A SO8FL	In Stock320 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 302A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.2W (Ta), 139W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
IXTU01N100D	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 0.1A TO-251	In Stock317 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 0V	Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V	Vgs(th) (Max) @ Id: 5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V	FET Feature: Depletion Mode	Power Dissipation (Max): 1.1W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
TK6A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 5.5A TO-220SIS	In Stock303 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 550V	Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.48Ohm @ 2.8A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
FCP260N65S3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 260MOHM TO220	In Stock599 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1.2mA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V	FET Feature: -	Power Dissipation (Max): 90W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
DMG10N60SCT	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A TO220AB	In Stock195 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1587pF @ 16V	FET Feature: -	Power Dissipation (Max): 178W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
FCP380N60E	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO220-3	In Stock423 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V	FET Feature: -	Power Dissipation (Max): 106W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
AUIRFZ24NSTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A D2PAK	In Stock292 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 45W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-PAK (TO-252AA)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK6A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 525V 6A TO-220SIS	In Stock126 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 525V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
TK7A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 7A TO-220SIS	In Stock502 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
BUK625R0-40C,118	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A DPAK	In Stock383 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V	FET Feature: -	Power Dissipation (Max): 158W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DI9405T	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.3A 8-SOIC	In Stock412 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-TSOP (0.130", 3.30mm Width)
BUK661R6-30C,118	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 120A D2PAK	In Stock537 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 229nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 14964pF @ 25V	FET Feature: -	Power Dissipation (Max): 306W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSC050N10NS5ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single TRENCH >=100V	In Stock561 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™ 5	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 72µA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 50V	FET Feature: -	Power Dissipation (Max): 3W (Ta), 136W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-7	Package / Case: 8-PowerTDFN
AUIRL3705Z	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 86A TO-220AB	In Stock580 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V	FET Feature: -	Power Dissipation (Max): 130W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
AOTF20N40L	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 20A TO220F	In Stock494 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 400V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3F	Package / Case: TO-220-3 Full Pack
IPA65R380C6XKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10.6A TO220	In Stock382 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 320µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V	FET Feature: -	Power Dissipation (Max): 31W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220 Full Pack	Package / Case: TO-220-3 Full Pack
SI4456DY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 33A 8-SOIC	In Stock535 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 33A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5670pF @ 20V	FET Feature: -	Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
AOTF20N60	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO220F	In Stock368 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3F	Package / Case: TO-220-3 Full Pack
AOTF22N50	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO220F	In Stock473 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3F	Package / Case: TO-220-3 Full Pack
NTMFS4H013NFT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 35A SO8FL	In Stock268 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 269A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3923pF @ 12V	FET Feature: -	Power Dissipation (Max): 2.7W (Ta), 104W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
SQM50N04-4M0L_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 40V 50A TO263	In Stock538 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRF7736M2TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 179A DIRECTFET	In Stock495 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V	Vgs(th) (Max) @ Id: 4V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4267pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 63W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ M4	Package / Case: DirectFET™ Isometric M4
AOWF15S65	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A TO262F	In Stock332 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: aMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V	FET Feature: -	Power Dissipation (Max): 28W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: -	Package / Case: TO-262-3 Full Pack, I²Pak
NVD5117PLT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 61A DPAK	In Stock567 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4.8nF @ 25V	FET Feature: -	Power Dissipation (Max): 4.1W (Ta), 118W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9520STRRPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.8A D2PAK	In Stock451 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB