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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 488/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N CH 40V 14A 8-SO |
In Stock228 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 7V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 7V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 15A TO220 |
In Stock284 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 417W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 75A TO-220 |
In Stock472 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 146W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO263 |
In Stock540 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: aMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-263 (D²Pak) |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V LFPAK |
In Stock394 More on Order |
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Manufacturer: Renesas Electronics America |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 50A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 65W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK |
Package / Case: SC-100, SOT-669 |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 40A LFPAK |
In Stock578 More on Order |
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Manufacturer: Renesas Electronics America |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 40A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 65W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK |
Package / Case: SC-100, SOT-669 |
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Renesas Electronics America |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 25A LFPAK |
In Stock302 More on Order |
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Manufacturer: Renesas Electronics America |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 65W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK |
Package / Case: SC-100, SOT-669 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 14A 8PQFN |
In Stock451 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 50A TCPT3 |
In Stock212 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO-220F |
In Stock582 More on Order |
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Manufacturer: Sanken |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 30W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A TO262-3 |
In Stock587 More on Order |
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Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 4V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 79W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO262-3-1 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 123A 8PQFN |
In Stock590 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 123A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4090pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6), Power56 |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 70A TO262-3 |
In Stock512 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: 4V @ 83µA |
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO262-3 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single DIFFERENTIATED MOSFETS |
In Stock445 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 59A |
In Stock497 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET®, StrongIRFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: 2.25V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 57W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8SON |
In Stock561 More on Order |
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Manufacturer: |
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V |
Vgs (Max): +16V, -12V |
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 12.5V |
FET Feature: - |
Power Dissipation (Max): 3.2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSON-CLIP (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO-262 |
In Stock596 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 130W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO220 |
In Stock587 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: aMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 15A TO220 |
In Stock314 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: SDMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta), 333W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO262 |
In Stock506 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: aMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO262F |
In Stock307 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: aMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 27.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: - |
Package / Case: TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH TO252-3 |
In Stock360 More on Order |
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Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101, CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 345µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 83.3W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 9A TO-220 |
In Stock447 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 560V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 330µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 9A TO-220 |
In Stock538 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 330µA |
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 9A TO-262 |
In Stock568 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 330µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO262-3 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A TO220-3 |
In Stock510 More on Order |
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Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 79W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single LOW POWER_NEW |
In Stock385 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A TO220AB |
In Stock551 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 8DFN |
In Stock296 More on Order |
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Manufacturer: ON Semiconductor |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 8.7A TO220 |
In Stock392 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 340µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 31.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220 Full Pack |
Package / Case: TO-220-3 Full Pack |