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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 448/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIHP5N50D-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5.3A TO220AB	In Stock238 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
FDMS86581	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V POWER56	In Stock281 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPD65R950C6ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO252-3	In Stock633 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ C6	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V	FET Feature: -	Power Dissipation (Max): 37W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C450NWFAFT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 24A 102A 5DFN	In Stock393 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 65µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.6W (Ta), 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
AOT7N65	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO220	In Stock177 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V	FET Feature: -	Power Dissipation (Max): 192W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
IRFR2405TRLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 56A DPAK	In Stock460 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 56A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FQI5N60CTU	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4.5A I2PAK	In Stock545 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.13W (Ta), 100W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK (TO-262)	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPD50N04S308ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 50A TO252-3	In Stock549 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BSC065N06LS5ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 64A 8TDSON	In Stock663 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 64A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V	FET Feature: -	Power Dissipation (Max): 46W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-6	Package / Case: 8-PowerTDFN
TJ10S04M3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 10A DPAK-3	In Stock644 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): +10V, -20V	Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V	FET Feature: -	Power Dissipation (Max): 27W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TJ15S06M3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 15A DPAK-3	In Stock389 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): +10V, -20V	Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 10V	FET Feature: -	Power Dissipation (Max): 41W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TJ20S04M3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 20A DPAK-3	In Stock307 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V	Vgs (Max): +10V, -20V	Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 10V	FET Feature: -	Power Dissipation (Max): 41W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK20S04K3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 20A DPAK-3	In Stock274 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK20S06K3L(T6L1,NQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A DPAK-3	In Stock392 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK+	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RCD060N25TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 6A CPT3	In Stock227 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 530mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta), 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CPT3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RCD075N20TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 7.5A CPT3	In Stock478 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V	Vgs(th) (Max) @ Id: 5.25V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta), 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CPT3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RSD080P05TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 45V 8A CPT3	In Stock425 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 45V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 10V	FET Feature: -	Power Dissipation (Max): 15W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CPT3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RSD150N06TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A CPT3	In Stock540 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CPT3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH4007SPSQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 15.7A POWERDI506	In Stock613 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 136W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
DMTH6010LK3Q-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14.8A TO252	In Stock249 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V	FET Feature: -	Power Dissipation (Max): 31W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH3002LPS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 30V 100A POWERDI	In Stock567 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta), 136W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
DMPH4015SPS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50A POWERDI5060	In Stock542 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V	FET Feature: -	Power Dissipation (Max): 2.6W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
DMPH4015SSS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 40V 11.4A 8SO	In Stock575 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V	FET Feature: -	Power Dissipation (Max): 1.8W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
AON6224	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 100V 34A 8DFN	In Stock229 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 34A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 50V	FET Feature: -	Power Dissipation (Max): 56.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN-EP (5x6)	Package / Case: 8-PowerSMD, Flat Leads
NVMFS5C423NLWFAFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 31A 150A 5DFN	In Stock313 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 20V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 83W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
AON6548	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 85A 8-DFN	In Stock385 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaMOS	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 85A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V	FET Feature: -	Power Dissipation (Max): 7.4W (Ta), 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (5x6)	Package / Case: 8-PowerSMD, Flat Leads
DMT31M7LPS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V POWERDI506	In Stock156 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5741pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.3W (Ta), 113W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
IRF730BPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 5.5A TO-220AB	In Stock443 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 400V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 100V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
RDD022N50TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V CPT	In Stock251 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 4.7V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 168pF @ 25V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CPT3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RDD022N60TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V CPT	In Stock463 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.7Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 4.7V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 25V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CPT3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63