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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 425/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
DMP3007SCG-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 50A VDFN3333-8	In Stock442 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: V-DFN3333-8	Package / Case: 8-PowerVDFN
DMP3007SCG-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 50A VDFN3333-8	In Stock148 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: V-DFN3333-8	Package / Case: 8-PowerVDFN
SIS698DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 6.9A 1212-8	In Stock211 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V	FET Feature: -	Power Dissipation (Max): 19.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8	Package / Case: PowerPAK® 1212-8
DMP2021UTS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 18A 8-TSSOP	In Stock594 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 8V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-TSSOP	Package / Case: 8-TSSOP (0.173", 4.40mm Width)
TPCP8J01(TE85L,F,M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X35 PB-FREE POWER MOSFET TRANSIS	In Stock379 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 32V	Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.14W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PS-8	Package / Case: 8-SMD, Flat Lead
DMT4008LFV-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333	In Stock508 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 54.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.9mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1179pF @ 20V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta), 35.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
DMT4008LFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333	In Stock259 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 54.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.9mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1179pF @ 20V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta), 35.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
SIHFL9014TR-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V SOT-223	In Stock360 More on Order	Manufacturer: Vishay Siliconix	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTTFS005N04CTAG	ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V SG NCH U8FL	In Stock315 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-WDFN (3.3x3.3)	Package / Case: 8-PowerWDFN
DMN4036LK3Q-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V 40V TO252 T&R	In Stock183 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: -	Package / Case: -
IPD50R650CEAUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single CONSUMER	In Stock533 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
TSM4NB60CH X0G	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 4A TO251	In Stock327 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251 (IPAK)	Package / Case: TO-251-3 Stub Leads, IPak
FDMA8884	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.5A 6-MLP 2X2	In Stock311 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-MicroFET (2x2)	Package / Case: 6-VDFN Exposed Pad
IPD60R800CEAUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single CONSUMER	In Stock651 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IRFR9120NTRLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.6A DPAK	In Stock514 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AOI5N40	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 4.2A TO251A	In Stock412 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 400V	Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V	FET Feature: -	Power Dissipation (Max): 78W (Tc)	Operating Temperature: -50°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251A	Package / Case: TO-251-3 Stub Leads, IPak
AOD464	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 105V 40A TO252	In Stock504 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 105V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2445pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.3W (Ta), 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AOD2916	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 5.5A TO252	In Stock256 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AOY423	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH	In Stock154 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V, 20V	Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 90W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251B	Package / Case: TO-251-3 Stub Leads, IPak
AOD538	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 34A	In Stock336 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaMOS	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 15V	FET Feature: -	Power Dissipation (Max): 4.2W (Ta), 24W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FQU2N50BTU-WS	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 1.6A IPAK	In Stock382 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V	Vgs(th) (Max) @ Id: 3.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
NVMFS5C682NLWFAFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 8.8A 25A 5DFN	In Stock405 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2V @ 16µA	Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.5W (Ta), 28W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
TPC8092,LQ(S	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A 8SOP	In Stock416 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NVTFS5C460NLWFTAG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 74A	In Stock492 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 2V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-WDFN (3.3x3.3)	Package / Case: 8-PowerWDFN
IPD60R2K0C6ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO252	In Stock501 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ C6	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V	Vgs(th) (Max) @ Id: 3.5V @ 60µA	Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V	FET Feature: -	Power Dissipation (Max): 22.3W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6213-30A,118	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 55A DPAK	In Stock549 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 25V	FET Feature: -	Power Dissipation (Max): 102W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH6016LFDFWQ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V U-DFN2020-	In Stock573 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.06W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: U-DFN2020-6	Package / Case: 6-UDFN Exposed Pad
DKI03038	Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 48A TO-252	In Stock536 More on Order	Manufacturer: Sanken	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 47.2A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 650µA	Gate Charge (Qg) (Max) @ Vgs: 38.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DKI04046	Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 48A TO-252	In Stock249 More on Order	Manufacturer: Sanken	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 650µA	Gate Charge (Qg) (Max) @ Vgs: 35.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DKI06108	Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 47A TO-252	In Stock422 More on Order	Manufacturer: Sanken	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 47A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.1mOhm @ 23.6A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 650µA	Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63