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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 4/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSS138
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 220MA SOT-23

In Stock1,005,405

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
2N7002K-TP
Micro Commercial Co

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 340MA SOT-23-3

In Stock137,052

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Manufacturer: Micro Commercial Co
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
RUM001L02T2CL
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.1A VMT3

In Stock259,657

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VMT3
Package / Case: SOT-723
DMG1012T-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 630MA SOT-523

In Stock613,103

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Vgs (Max): ±6V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
FET Feature: -
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523
DMG1013T-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.46A SOT-523

In Stock439,720

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Vgs (Max): ±6V
Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
FET Feature: -
Power Dissipation (Max): 270mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523
2N7002A-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.18A SOT23

In Stock275,327

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
FET Feature: -
Power Dissipation (Max): 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
DMN6140L-13
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 1.6A SOT23

In Stock699,141

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
MMBF170LT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 500MA SOT-23

In Stock190,671

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
BSS84LT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 130MA SOT-23

In Stock660,504

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Manufacturer: ON Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
NTA7002NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 0.154A SOT-416

In Stock363,025

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
FET Feature: -
Power Dissipation (Max): 300mW (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75, SOT-416
Package / Case: SC-75, SOT-416
FDV304P
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 25V 460MA SOT-23

In Stock191,902

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Manufacturer: ON Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
DMP21D5UFB4-7B
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 700MA 3DFN

In Stock103,832

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 5V
Rds On (Max) @ Id, Vgs: 970mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 46.1pF @ 10V
FET Feature: -
Power Dissipation (Max): 460mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN1006-3
Package / Case: 3-XFDFN
DMN26D0UT-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 230MA SOT523

In Stock51,371

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V
FET Feature: -
Power Dissipation (Max): 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523
BSS138PW,115
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 320MA SOT323

In Stock129,841

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Manufacturer: Nexperia USA Inc.
Series: Automotive, AEC-Q101, TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: -
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SC-70
Package / Case: SC-70, SOT-323
BSS123
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 170MA SOT-23

In Stock515,761

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
DMG1013UW-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 820MA SOT323

In Stock322,526

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Vgs (Max): ±6V
Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
FET Feature: -
Power Dissipation (Max): 310mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
BSS84PH6327XTSA2
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 170MA SOT-23

In Stock184,647

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Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
BSS123WQ-7-F
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 0.17A SOT323

In Stock126,011

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
DMG1012UW-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 1A SOT323

In Stock426,063

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Vgs (Max): ±6V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
FET Feature: -
Power Dissipation (Max): 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
RUM002N05T2L
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 50V 0.2A 3VMT

In Stock34,284

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VMT3
Package / Case: SOT-723
2N7002
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 115MA SOT-23

In Stock1,918,106

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23 (TO-236AB)
Package / Case: TO-236-3, SC-59, SOT-23-3
NTA4001NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.238A SOT-416

In Stock52,707

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
FET Feature: -
Power Dissipation (Max): 300mW (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75, SOT-416
Package / Case: SC-75, SOT-416
DMP3099L-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V SOT23

In Stock467,680

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.08W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
DMG2302UK-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.8A SOT23

In Stock581,865

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Manufacturer: Diodes Incorporated
Series: Automotive, AEC-Q101
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
FET Feature: -
Power Dissipation (Max): 660mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
BSN20BKR
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.265A SOT-23

In Stock182,465

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Manufacturer: Nexperia USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.49nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 20.2pF @ 30V
FET Feature: -
Power Dissipation (Max): 310mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
FDV302P
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 25V 120MA SOT-23

In Stock258,386

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Manufacturer: ON Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
BSS84
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 50V 130MA SOT-23

In Stock588,433

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Manufacturer: ON Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
BSS138WH6327XTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 280MA SOT-323

In Stock301,652

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Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT323-3
Package / Case: SC-70, SOT-323
BSS138NH6327XTSA2
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 230MA SOT-23

In Stock100,596

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Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
BSS123,215
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 150MA SOT-23

In Stock274,988

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Manufacturer: Nexperia USA Inc.
Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3