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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 371/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SISHA04DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V PP 1212-8	In Stock532 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V	Vgs (Max): +20V, -16V	Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 52W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8SH	Package / Case: PowerPAK® 1212-8SH
SIS126DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V PP 1212-8	In Stock381 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V	Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1402pF @ 40V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 52W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8	Package / Case: PowerPAK® 1212-8
SQJA38EP-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 60A PP SO-8L	In Stock290 More on Order	Manufacturer: Vishay Siliconix	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NVMYS010N04CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 40V 38A	In Stock222 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 28W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LFPAK	Package / Case: SOT-1023, 4-LFPAK
BUK6Y25-40PX	Nexperia	Transistors - FETs, MOSFETs - Single BUK6Y25-40P/SOT669/LFPAK	In Stock500 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 38A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1591pF @ 20V	FET Feature: -	Power Dissipation (Max): 66W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
BUK6Y20-30PX	Nexperia	Transistors - FETs, MOSFETs - Single BUK6Y20-30P/SOT669/LFPAK	In Stock579 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 41A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1408pF @ 15V	FET Feature: -	Power Dissipation (Max): 66W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
BUK6Y57-60PX	Nexperia	Transistors - FETs, MOSFETs - Single BUK6Y57-60P/SOT669/LFPAK	In Stock227 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 23A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 57mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1.2nF @ 30V	FET Feature: -	Power Dissipation (Max): 66W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
AOD1R4A70	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single 700V, A MOSTM N-CHANNEL POWER TR	In Stock178 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: aMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 4.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 100V	FET Feature: -	Power Dissipation (Max): 48W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252 (DPAK)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVMYS014N06CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 60V 42A	In Stock451 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 37W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LFPAK	Package / Case: SOT-1023, 4-LFPAK
SIJA72ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 40V PPAK SO-8L	In Stock241 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 27.9A (Ta), 96A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.42mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): +20V, -16V	Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 20V	FET Feature: -	Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
STS9P3LLH6	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET PCH 30V 9A SO8	In Stock321 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™ H6	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.7W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STU3N65M6	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 650V 3.5A IPAK	In Stock320 More on Order	Manufacturer: STMicroelectronics	Series: MDmesh™ M6	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V	Vgs(th) (Max) @ Id: 3.75V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
SIR122DP-T1-RE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V PPAK SO-8	In Stock547 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 16.7A (Ta), 59.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V	Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 40V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SIJA58ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 40-V POWERPAK SO-8	In Stock352 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): +20V, -16V	Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V	FET Feature: -	Power Dissipation (Max): 5W (Ta), 56.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SUD23N06-31L-T4-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO252	In Stock254 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V	FET Feature: -	Power Dissipation (Max): 3W (Ta), 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVMYS8D0N04CTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 40V 48A	In Stock610 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 38W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LFPAK	Package / Case: SOT-1023, 4-LFPAK
SISS61DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V PPAK 1212-8S	In Stock409 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen III	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 231nC @ 10V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 8740pF @ 10V	FET Feature: -	Power Dissipation (Max): 5W (Ta), 65.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8S	Package / Case: PowerPAK® 1212-8S
NTMYS025N06CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 60V 21A	In Stock332 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BUK7M3R3-40HX	Nexperia	Transistors - FETs, MOSFETs - Single BUK7M3R3-40H/SOT1210/MLFPAK	In Stock517 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 80A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3.6V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): +20V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 3037pF @ 25V	FET Feature: -	Power Dissipation (Max): 101W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK33	Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
NVMYS7D3N04CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 40V 50A	In Stock364 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 38W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LFPAK	Package / Case: SOT-1023, 4-LFPAK
NTMYS011N04CTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 40V 35A	In Stock307 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTMYS021N06CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 60V 26A	In Stock605 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
STD3N65M6	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V DPAK	In Stock424 More on Order	Manufacturer: STMicroelectronics	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
STD30N6LF6AG	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 24A	In Stock479 More on Order	Manufacturer: STMicroelectronics	Series: Automotive, AEC-Q101, STripFET™ F6	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFD6H852NLT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 80V	In Stock542 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2V @ 26µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V	FET Feature: -	Power Dissipation (Max): 3.2W (Ta), 38W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package / Case: 8-PowerTDFN
NTMYS010N04CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single NCH FET	In Stock197 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SIR167DP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHAN 30V POWERPAK SO-8	In Stock503 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen III	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V	FET Feature: -	Power Dissipation (Max): 65.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SIR124DP-T1-RE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 80-V POWERPAK SO-8	In Stock435 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V	Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 40V	FET Feature: -	Power Dissipation (Max): 5W (Ta), 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
NTMYS014N06CLTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 60V 42A	In Stock623 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AOSP66920	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single 100V N-CHANNEL ALPHASGTTM	In Stock317 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaSGT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)