FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 367/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SCT30N120	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 45A HIP247	In Stock487 More on Order	Manufacturer: STMicroelectronics	Series: -	FET Type: N-Channel	Technology: SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V	Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)	Gate Charge (Qg) (Max) @ Vgs: 105nC @ 20V	Vgs (Max): +25V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 400V	FET Feature: -	Power Dissipation (Max): 270W (Tc)	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: HiP247™	Package / Case: TO-247-3
APT51F50J	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 51A SOT-227	In Stock383 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 51A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: ISOTOP®	Package / Case: SOT-227-4, miniBLOC
APT39F60J	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 42A SOT-227	In Stock365 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: ISOTOP®	Package / Case: SOT-227-4, miniBLOC
APT10M11JVRU3	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 142A SOT227	In Stock451 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 142A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V	Vgs(th) (Max) @ Id: 4V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V	FET Feature: -	Power Dissipation (Max): 450W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227	Package / Case: SOT-227-4, miniBLOC
APT25M100J	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 25A SOT-227	In Stock404 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V	FET Feature: -	Power Dissipation (Max): 545W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: ISOTOP®	Package / Case: SOT-227-4, miniBLOC
APT17F120J	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 18A SOT-227	In Stock132 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V	FET Feature: -	Power Dissipation (Max): 545W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: ISOTOP®	Package / Case: SOT-227-4, miniBLOC
APT40N60JCU2	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 40A SOT-227	In Stock444 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.9V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V	FET Feature: -	Power Dissipation (Max): 290W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227	Package / Case: SOT-227-4, miniBLOC
APT58M80J	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 58A SOT-227	In Stock548 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 60A	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 17550pF @ 25V	FET Feature: -	Power Dissipation (Max): 960W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227	Package / Case: SOT-227-4, miniBLOC
APT34M120J	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 34A SOT-227	In Stock362 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V	FET Feature: -	Power Dissipation (Max): 960W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227	Package / Case: SOT-227-4, miniBLOC
APT10021JLL	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 37A SOT-227	In Stock679 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 7®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 37A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V	FET Feature: -	Power Dissipation (Max): 694W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: ISOTOP®	Package / Case: SOT-227-4, miniBLOC
RU1L002SNTL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, 2.5V. MOSFETS	In Stock305 More on Order	Manufacturer: Rohm Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3J15F,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3	In Stock491 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3K35CT,L3F	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS=20	In Stock525 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3J15FS,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-3	In Stock461 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3J66MFV,L3F	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS-20	In Stock464 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3K48FU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS30V	In Stock603 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SI3434-TP	Micro Commercial Co	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 5A SOT23	In Stock428 More on Order	Manufacturer: Micro Commercial Co	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5A	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
SSM6J412TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS=-2	In Stock245 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM6J422TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS-20	In Stock256 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM6K405TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS20V	In Stock166 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3J135TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS-20	In Stock336 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3K127TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS30V	In Stock256 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM5H90ATU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS60V	In Stock234 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3K122TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS20V	In Stock308 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM3J118TU(TE85L)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.4A UFM	In Stock383 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSII	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: UFM	Package / Case: 3-SMD, Flat Leads
RHK005N03FRAT146	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 4V DRIVE NCH MOSFET (AEC-Q101 QU	In Stock290 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V	FET Feature: -	Power Dissipation (Max): 200mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SMT3	Package / Case: TO-236-3, SC-59, SOT-23-3
SI8819EDB-T2-E1	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2.9A 4-MICROFOOT	In Stock487 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V	Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 6V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)	Package / Case: 4-XFBGA
SSM5H08TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH+SBD VDS	In Stock495 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM6J424TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS-20	In Stock337 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SSM6K404TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS20V	In Stock404 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -