FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 242/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PSMN3R3-80BS,118	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A D2PAK	In Stock1,732 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V	FET Feature: -	Power Dissipation (Max): 306W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLR7833	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 140A DPAK	In Stock15,656 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC86259P	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A POWER33	In Stock244 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2045pF @ 75V	FET Feature: -	Power Dissipation (Max): 2.3W (Ta), 62W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: Power33	Package / Case: 8-PowerWDFN
STD155N3H6	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A DPAK	In Stock400 More on Order	Manufacturer: STMicroelectronics	Series: DeepGATE™, STripFET™ VI	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9220TRLPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 3.6A DPAK	In Stock517 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK0855DPB-00#J5	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 30A LFPAK	In Stock363 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK	Package / Case: SC-100, SOT-669
R6006JNJGTL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6006JNJ IS A POWER MOSFET WITH	In Stock1,841 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V	Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V	Vgs(th) (Max) @ Id: 7V @ 800µA	Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 15V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V	FET Feature: -	Power Dissipation (Max): 86W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LPTS (D2PAK)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDMC8321LDC	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 27A POWER33	In Stock546 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 20V	FET Feature: -	Power Dissipation (Max): 2.9W (Ta), 56W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: Dual Cool ™ 33	Package / Case: 8-PowerTDFN
STL120N8F7	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A	In Stock540 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™ F7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.4mOhm @ 11.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4570pF @ 25V	FET Feature: -	Power Dissipation (Max): 4.8W (Ta), 140W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerFlat™ (5x6)	Package / Case: 8-PowerVDFN
CSD18510Q5B	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 300A 8VSON	In Stock575 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 300A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 0.96mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V	FET Feature: -	Power Dissipation (Max): 156W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-VSON-CLIP (5x6)	Package / Case: 8-PowerTDFN
RSJ400N06TL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 40A LTPS	In Stock2,112 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LPTS	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD6N90K5	STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 900 V, 2.1 OHM TYP., 3	In Stock266 More on Order	Manufacturer: STMicroelectronics	Series: MDmesh™ K5	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVMYS1D3N04CTWG	ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET	In Stock365 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: LFPAK4 (5x6)	Package / Case: SC-100, SOT-669
TPH2900ENH,L1Q	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 33A SOP8	In Stock521 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVIII-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 33A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 100V	FET Feature: -	Power Dissipation (Max): 78W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP Advance (5x5)	Package / Case: 8-PowerVDFN
IRF1405ZLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO-262	In Stock3,156 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V	FET Feature: -	Power Dissipation (Max): 230W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
STL16N60M6	STMicroelectronics	Transistors - FETs, MOSFETs - Single NCHANNEL 600V M6 POWER MOSFET	In Stock577 More on Order	Manufacturer: STMicroelectronics	Series: MDmesh™	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: PowerFlat™ (5x6) HV	Package / Case: 8-PowerVDFN
STL9N60M2	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4.8A PWRFLAT56	In Stock253 More on Order	Manufacturer: STMicroelectronics	Series: MDmesh™ II Plus	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V	FET Feature: -	Power Dissipation (Max): 48W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerFlat™ (5x6) HV	Package / Case: 8-PowerVDFN
R6006ANDTL	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 6A CPT	In Stock410 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CPT3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STL130N6F7	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 130A F7 8PWRFLAT	In Stock437 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™ F7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 130A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V	FET Feature: -	Power Dissipation (Max): 4.8W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerFlat™ (5x6)	Package / Case: 8-PowerVDFN
IRF3808PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 140A TO-220AB	In Stock2,615 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V	FET Feature: -	Power Dissipation (Max): 330W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
CSD17556Q5B	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8-VSON	In Stock510 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.4mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 1.65V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 191W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-VSON-CLIP (5x6)	Package / Case: 8-PowerTDFN
SIR668DP-T1-RE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 95A POWERPAKSO	In Stock414 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 95A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 83nC @ 7.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 50V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
STD45N10F7	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 45A DPAK	In Stock486 More on Order	Manufacturer: STMicroelectronics	Series: DeepGATE™, STripFET™ VII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 45A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK0301DPB-02#J0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A 5-LFPAK	In Stock165 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V	Vgs (Max): +16V, -12V	Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-LFPAK	Package / Case: SC-100, SOT-669
FDMC013P030Z	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 54A 8MLP	In Stock429 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 5785pF @ 15V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-MLP (3.3x3.3)	Package / Case: 8-PowerWDFN
FDMS030N06B	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22.1A POWER56	In Stock382 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7560pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-PQFN (5x6)	Package / Case: 8-PowerTDFN
RRH140P03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 14A SOP8	In Stock405 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 10V	FET Feature: -	Power Dissipation (Max): 650mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STD100NH02LT4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 60A DPAK	In Stock10,601 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3940pF @ 15V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STB12NM50N	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 11A D2PAK	In Stock484 More on Order	Manufacturer: STMicroelectronics	Series: MDmesh™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STS26N3LLH6	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 26A 8-SOIC	In Stock358 More on Order	Manufacturer: STMicroelectronics	Series: DeepGATE™, STripFET™ VI	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.7W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)