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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 201/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMN25D0UFA-7B
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 0.24A 3DFN

In Stock386

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs (Max): 8V
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
FET Feature: -
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN0806-3
Package / Case: 3-XFDFN
PMN55ENEX
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 4.5A 6TSOP

In Stock340

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Manufacturer: Nexperia USA Inc.
Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 30V
FET Feature: -
Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
RQ6E045BNTCR
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.5A TSMT

In Stock393

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6
SI2308BDS-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 2.3A SOT23-3

In Stock485

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
FET Feature: -
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
AO6415
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.3A 6TSOP

In Stock327

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Manufacturer: Alpha & Omega Semiconductor Inc.
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
SIRA88DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 45.5A POWERPAKSO

In Stock154

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Manufacturer: Vishay Siliconix
Series: TrenchFET® Gen IV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
SIR172ADP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 24A 8-SO

In Stock360

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 15V
FET Feature: -
Power Dissipation (Max): 29.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
SSM3J353F,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

X34 PB-F SMALL LOW ON RESISTANE

In Stock371

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Manufacturer: Toshiba Semiconductor and Storage
Series: U-MOSVI
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Vgs (Max): +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds: 159pF @ 15V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
MMBF2201NT1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 300MA SOT-323

In Stock558

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3 (SOT323)
Package / Case: SC-70, SOT-323
DMP2240UW-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.5A SC70-3

In Stock210

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
TSM126CX RFG
Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 30MA SOT23

In Stock512

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Rds On (Max) @ Id, Vgs: 800Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id: 1V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 1.18nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 51.42pF @ 25V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
PMPB47XP,115
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 4A 6DFN

In Stock413

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Manufacturer: Nexperia USA Inc.
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1365pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN2020MD-6
Package / Case: 6-UDFN Exposed Pad
SI1013CX-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.45A SC89-3

In Stock642

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Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
FET Feature: -
Power Dissipation (Max): 190mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-89-3
Package / Case: SC-89, SOT-490
SIRA72DP-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 60A POWERPAKSO-8

In Stock4,441

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Manufacturer: Vishay Siliconix
Series: TrenchFET® Gen IV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 20V
FET Feature: -
Power Dissipation (Max): 56.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
PMZ600UNELYL
Nexperia

Transistors - FETs, MOSFETs - Single

20 V, N-CHANNEL TRENCH MOSFET

In Stock530

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Manufacturer: Nexperia USA Inc.
Series: -
FET Type: N-Channel
Technology: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
FET Feature: Standard
Power Dissipation (Max): 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN1006-3
Package / Case: SC-101, SOT-883
DMN3021LFDF-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11.8A UDFN2020-6

In Stock453

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 706pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.03W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad
SISA34DN-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A POWERPAK1212

In Stock306

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Manufacturer: Vishay Siliconix
Series: TrenchFET® Gen IV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
FET Feature: -
Power Dissipation (Max): 20.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
MCH6445-TL-W
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 4A MCPH6

In Stock372

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Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads
DMN3042LFDF-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 7A UDFN2020-6

In Stock490

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Manufacturer: Diodes Incorporated
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad
RTE002P02TL
Rohm Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.2A SOT416

In Stock519

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Manufacturer: Rohm Semiconductor
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
SI2319DDS-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CHAN 40V

In Stock367

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Manufacturer: Vishay Siliconix
Series: TrenchFET® Gen III
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
DMP2035UFDF-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.1A UDFN2020-6

In Stock262

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1808pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.03W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad
AO3404A
Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.8A SOT23

In Stock471

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Manufacturer: Alpha & Omega Semiconductor Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3L
Package / Case: TO-236-3, SC-59, SOT-23-3
DMP2088LCP3-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.9A X2DFN1006-3

In Stock419

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Manufacturer: Diodes Incorporated
Series: -
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): -12V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DSN1006-3
Package / Case: 3-XFDFN
DMP2035UVTQ-7
Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 7.2A TSOT26

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Manufacturer: Diodes Incorporated
Series: Automotive, AEC-Q101
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSOT-26
Package / Case: SOT-23-6 Thin, TSOT-23-6
FK4B01110L1
Panasonic Electronic Components

Transistors - FETs, MOSFETs - Single

CSP SINGLE N-CHANNEL MOSFET

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Manufacturer: Panasonic Electronic Components
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 118µA
Gate Charge (Qg) (Max) @ Vgs: 2.55nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 10V
FET Feature: -
Power Dissipation (Max): 340mW (Ta)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: ALGA004-W-0606-RA01
Package / Case: 4-XFLGA, CSP
TN2106K1-G
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 280MA SOT23-3

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Manufacturer: Microchip Technology
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
FET Feature: -
Power Dissipation (Max): 360mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3
MIC94051YM4-TR
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 6V 1.8A 8MSOP

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Manufacturer: Microchip Technology
Series: SymFET™
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 6V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): 6V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
FET Feature: -
Power Dissipation (Max): 568mW (Ta)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-143
Package / Case: TO-253-4, TO-253AA
VN2222LL-G-P003
Microchip Technology

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.23A TO92-3

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Manufacturer: Microchip Technology
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
FET Feature: -
Power Dissipation (Max): 400mW (Ta), 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STL4P2UH7
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4A PWRFLAT2X2

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Manufacturer: STMicroelectronics
Series: DeepGATE™, STripFET™ VII
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
FET Feature: -
Power Dissipation (Max): 2.4W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (2x2)
Package / Case: 6-PowerWDFN