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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 191/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2A TUMT6 |
In Stock8,832 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT6 |
Package / Case: 6-SMD, Flat Leads |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, SOP-8 PACKAGE |
In Stock4,820 More on Order |
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Manufacturer: Micro Commercial Co |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TA) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2A ES6 |
In Stock5,974 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: ES6 (1.6x1.6) |
Package / Case: SOT-563, SOT-666 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 11.9A 8SO |
In Stock6,637 More on Order |
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Manufacturer: Vishay Siliconix |
Series: SkyFET®, TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 4.1W (Tc) |
Operating Temperature: -55°C ~ 150°C (TA) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10.5A 8SOIC |
In Stock19,447 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 20V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 20V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 240MA SOT-23 |
In Stock181,419 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V U-WLB1515-9 |
In Stock256 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 33mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V |
Vgs (Max): -6V |
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-WLB1515-9 |
Package / Case: 9-UFBGA, WLBGA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.4A 8SO |
In Stock3,625 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V MICROFOOT |
In Stock4,057 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-Microfoot |
Package / Case: 4-XFBGA, CSPBGA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.5A MICRO8 |
In Stock5,390 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro8™ |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3.5A SOT223 |
In Stock5,837 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 6.9W (Tc) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-73 |
Package / Case: TO-261-4, TO-261AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.1A TO92-3 |
In Stock182 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 625mW (Ta) |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-92-3 |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A VESM |
In Stock506 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: VESM |
Package / Case: SOT-723 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single 2N7002 FAMILY SOT23 |
In Stock570 More on Order |
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Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.233nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 1.2A MINI-5P |
In Stock4,731 More on Order |
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Manufacturer: Panasonic Electronic Components |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V |
Rds On (Max) @ Id, Vgs: 450mOhm @ 800mA, 4V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 600mW (Ta) |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Mini5-G1 |
Package / Case: SC-74A, SOT-753 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 45V 700MA TUMT5 |
In Stock3,860 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 45V |
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 800mOhm @ 700mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT5 |
Package / Case: 6-SMD (5 Leads), Flat Lead |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N CH 30V 18A 8SOIC |
In Stock5,054 More on Order |
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Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE PCH |
In Stock286 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSVII |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: VESM |
Package / Case: SOT-723 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 20V 250MA SSM |
In Stock344 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSIII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SSM |
Package / Case: SC-75, SOT-416 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 4.6A 8SOIC |
In Stock3,149 More on Order |
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Manufacturer: Vishay Siliconix |
Series: LITTLE FOOT® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 2.75W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V MLFPAK |
In Stock2,561 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 55W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK33 |
Package / Case: SOT-1210, 8-LFPAK33 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 30A SC70-6 |
In Stock4,217 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® Gen IV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V |
Vgs (Max): +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 19.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Single |
Package / Case: PowerPAK® SC-70-6 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFETN-CHAN 60V SOT23 |
In Stock446 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.821nC @ 10V |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 570mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A DPAK |
In Stock16,716 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 80W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE PCH |
In Stock359 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSVII |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: SSM |
Package / Case: SC-75, SOT-416 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 50A 1212-8 |
In Stock4,206 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2135pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) |
Package / Case: PowerPAK® 1212-8S |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.25A SST3 |
In Stock537 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 200mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SST3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, SOT-323 PACKAG |
In Stock383 More on Order |
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Manufacturer: Micro Commercial Co |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 155°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-323 |
Package / Case: SC-70, SOT-323 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A 8PQFN |
In Stock4,698 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1543pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.6W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (3.3x3.3), Power33 |
Package / Case: 8-PowerTDFN |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A TUMT6 |
In Stock4,001 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT6 |
Package / Case: 6-SMD, Flat Leads |