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MUN5241T1G
MUN5241T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS BRT NPN 50V 100MA SC70-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 202mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
In Stock280

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NSB9435T1G
NSB9435T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.72W SOT223

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Resistor - Base (R1): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
  • Frequency - Transition: 110MHz
  • Power - Max: 720mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
In Stock317

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NSBA113EF3T5G
NSBA113EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL PNP

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock506

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NSBA114EF3T5G
NSBA114EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock560

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NSBA114TF3T5G
NSBA114TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock186

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NSBA114YF3T5G
NSBA114YF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock554

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NSBA115TF3T5G
NSBA115TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock392

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NSBA123EF3T5G
NSBA123EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL PNP

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock397

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NSBA123JF3T5G
NSBA123JF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock247

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NSBA123TF3T5G
NSBA123TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock251

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NSBA124EF3T5G
NSBA124EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock485

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NSBA124XF3T5G
NSBA124XF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL PNP

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock356

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NSBA143EF3T5G
NSBA143EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7 kOhms
  • Resistor - Emitter Base (R2): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock301

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NSBA143TF3T5G
NSBA143TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL PNP

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock437

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NSBA143ZF3T5G
NSBA143ZF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock207

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NSBA144EF3T5G
NSBA144EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock601

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NSBA144TF3T5G
NSBA144TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock410

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NSBA144WF3T5G
NSBA144WF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock216

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NSBC113EF3T5G
NSBC113EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL NPN

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock302

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NSBC114EF3T5G
NSBC114EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock270

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NSBC114TF3T5G
NSBC114TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock373

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NSBC114YF3T5G
NSBC114YF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock520

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NSBC115TF3T5G
NSBC115TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock344

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NSBC123EF3T5G
NSBC123EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL NPN

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock247

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NSBC123JF3T5G
NSBC123JF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock362

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NSBC123TF3T5G
NSBC123TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock283

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NSBC124EF3T5G
NSBC124EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock536

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NSBC124XF3T5G
NSBC124XF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL NPN

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock682

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NSBC143EF3T5G
NSBC143EF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 254MW SOT1123

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7 kOhms
  • Resistor - Emitter Base (R2): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock493

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NSBC143TF3T5G
NSBC143TF3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS DUAL NPN

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
In Stock378

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