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NSBA123EF3T5G
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NSBA123EF3T5G


Part Number NSBA123EF3T5G
Zouser Part # NSBA123EF3T5G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS DUAL PNP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NSBA123EF3T5G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock397 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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NSBA123EF3T5G Specifications

Part Number NSBA123EF3T5G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer ON Semiconductor
Series -
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 254mW
Mounting Type Surface Mount
Package / Case SOT-1123
Supplier Device Package SOT-1123

NSBA123EF3T5G Documents

NSBA123EF3T5G, NSBA123EF3T5G Datasheet (Total Pages: 11, Size: 170.74 KB)
MMUN2131LT1G Datasheet CoverMMUN2131LT1G Datasheet Page 2MMUN2131LT1G Datasheet Page 3MMUN2131LT1G Datasheet Page 4MMUN2131LT1G Datasheet Page 5MMUN2131LT1G Datasheet Page 6MMUN2131LT1G Datasheet Page 7MMUN2131LT1G Datasheet Page 8MMUN2131LT1G Datasheet Page 9MMUN2131LT1G Datasheet Page 10MMUN2131LT1G Datasheet Page 11

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