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TK60D08J1(Q)


Part Number TK60D08J1(Q)
Zouser Part # TK60D08J1-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 75V 60A TO220W
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models TK60D08J1(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock450 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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TK60D08J1(Q) Specifications

Part Number TK60D08J1(Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5450pF @ 10V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220(W)
Package / Case TO-220-3

TK60D08J1(Q) Documents

TK60D08J1(Q), TK60D08J1(Q) Datasheet (Total Pages: 6, Size: 210.48 KB)
TK60D08J1(Q) Datasheet CoverTK60D08J1(Q) Datasheet Page 2TK60D08J1(Q) Datasheet Page 3TK60D08J1(Q) Datasheet Page 4TK60D08J1(Q) Datasheet Page 5TK60D08J1(Q) Datasheet Page 6

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