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TK60D08J1(Q) Datasheet

TK60D08J1(Q) Cover
DatasheetTK60D08J1(Q)
File Size210.48 KB
Total Pages6
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts TK60D08J1(Q)
Description MOSFET N-CH 75V 60A TO220W

TK60D08J1(Q) - Toshiba Semiconductor and Storage

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TK60D08J1(Q) TK60D08J1(Q) Toshiba Semiconductor and Storage MOSFET N-CH 75V 60A TO220W 450

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TK60D08J1(Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5450pF @ 10V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220(W)

Package / Case

TO-220-3