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SI4196DY-T1-E3


Part Number SI4196DY-T1-E3
Zouser Part # SI4196DY-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V 8A 8SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI4196DY-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock359 - More on Order
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SI4196DY-T1-E3 Specifications

Part Number SI4196DY-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 27mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

SI4196DY-T1-E3 Documents

SI4196DY-T1-E3, SI4196DY-T1-E3 Datasheet (Total Pages: 7, Size: 111.37 KB)
SI4196DY-T1-E3 Datasheet CoverSI4196DY-T1-E3 Datasheet Page 2SI4196DY-T1-E3 Datasheet Page 3SI4196DY-T1-E3 Datasheet Page 4SI4196DY-T1-E3 Datasheet Page 5SI4196DY-T1-E3 Datasheet Page 6SI4196DY-T1-E3 Datasheet Page 7

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