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SI4196DY-T1-E3 Datasheet

SI4196DY-T1-E3 Cover
DatasheetSI4196DY-T1-E3
File Size111.37 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4196DY-T1-E3, SI4196DY-T1-GE3
Description MOSFET N-CH 20V 8A 8SOIC, MOSFET N-CH 20V 8A 8SOIC

SI4196DY-T1-E3 - Vishay Siliconix

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URL Link

SI4196DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

27mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 4.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

SI4196DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

27mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 4.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)