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IPP230N06L3 G
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IPP230N06L3 G


Part Number IPP230N06L3 G
Zouser Part # IPP230N06L3-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 30A TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP230N06L3 G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock563 - More on Order
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IPP230N06L3 G Specifications

Part Number IPP230N06L3 G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 30V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP230N06L3 G Documents

IPP230N06L3 G, IPP230N06L3 G Datasheet (Total Pages: 10, Size: 400.26 KB)
IPB230N06L3GATMA1 Datasheet CoverIPB230N06L3GATMA1 Datasheet Page 2IPB230N06L3GATMA1 Datasheet Page 3IPB230N06L3GATMA1 Datasheet Page 4IPB230N06L3GATMA1 Datasheet Page 5IPB230N06L3GATMA1 Datasheet Page 6IPB230N06L3GATMA1 Datasheet Page 7IPB230N06L3GATMA1 Datasheet Page 8IPB230N06L3GATMA1 Datasheet Page 9IPB230N06L3GATMA1 Datasheet Page 10

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