Datasheet | IPB230N06L3GATMA1 |
File Size | 400.26 KB |
Total Pages | 10 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IPB230N06L3GATMA1, IPP230N06L3 G |
Description | MOSFET N-CH 60V 30A TO263-3, MOSFET N-CH 60V 30A TO220-3 |
IPB230N06L3GATMA1 - Infineon Technologies
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IPB230N06L3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 30A TO263-3 | 429 More on Order |
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IPP230N06L3 G | Infineon Technologies | MOSFET N-CH 60V 30A TO220-3 | 563 More on Order |
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Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 30V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 30V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |