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IPB070N06L G


Part Number IPB070N06L G
Zouser Part # IPB070N06L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 80A TO-263
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB070N06L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock450 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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IPB070N06L G Specifications

Part Number IPB070N06L G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 30V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB070N06L G Documents

IPB070N06L G, IPB070N06L G Datasheet (Total Pages: 10, Size: 736.86 KB)
IPB070N06L G Datasheet CoverIPB070N06L G Datasheet Page 2IPB070N06L G Datasheet Page 3IPB070N06L G Datasheet Page 4IPB070N06L G Datasheet Page 5IPB070N06L G Datasheet Page 6IPB070N06L G Datasheet Page 7IPB070N06L G Datasheet Page 8IPB070N06L G Datasheet Page 9IPB070N06L G Datasheet Page 10

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