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IPB65R600C6ATMA1


Part Number IPB65R600C6ATMA1
Zouser Part # IPB65R600C6ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 7.3A TO263
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB65R600C6ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock364 - More on Order
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IPB65R600C6ATMA1 Specifications

Part Number IPB65R600C6ATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R600C6ATMA1 Documents

IPB65R600C6ATMA1, IPB65R600C6ATMA1 Datasheet (Total Pages: 19, Size: 2,092.73 KB)
IPB65R600C6ATMA1 Datasheet CoverIPB65R600C6ATMA1 Datasheet Page 2IPB65R600C6ATMA1 Datasheet Page 3IPB65R600C6ATMA1 Datasheet Page 4IPB65R600C6ATMA1 Datasheet Page 5IPB65R600C6ATMA1 Datasheet Page 6IPB65R600C6ATMA1 Datasheet Page 7IPB65R600C6ATMA1 Datasheet Page 8IPB65R600C6ATMA1 Datasheet Page 9IPB65R600C6ATMA1 Datasheet Page 10IPB65R600C6ATMA1 Datasheet Page 11IPB65R600C6ATMA1 Datasheet Page 12IPB65R600C6ATMA1 Datasheet Page 13IPB65R600C6ATMA1 Datasheet Page 14

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