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IPB065N06L G


Part Number IPB065N06L G
Zouser Part # IPB065N06L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 80A D2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB065N06L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock279 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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IPB065N06L G Specifications

Part Number IPB065N06L G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 157nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 30V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB065N06L G Documents

IPB065N06L G, IPB065N06L G Datasheet (Total Pages: 10, Size: 738.54 KB)
IPP065N06LGAKSA1 Datasheet CoverIPP065N06LGAKSA1 Datasheet Page 2IPP065N06LGAKSA1 Datasheet Page 3IPP065N06LGAKSA1 Datasheet Page 4IPP065N06LGAKSA1 Datasheet Page 5IPP065N06LGAKSA1 Datasheet Page 6IPP065N06LGAKSA1 Datasheet Page 7IPP065N06LGAKSA1 Datasheet Page 8IPP065N06LGAKSA1 Datasheet Page 9IPP065N06LGAKSA1 Datasheet Page 10

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