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SIHP35N60E-GE3


Part Number SIHP35N60E-GE3
Zouser Part # SIHP35N60E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 32A TO220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHP35N60E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock1,673 - More on Order
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SIHP35N60E-GE3 Specifications

Part Number SIHP35N60E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series E
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2760pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

SIHP35N60E-GE3 Documents

SIHP35N60E-GE3, SIHP35N60E-GE3 Datasheet (Total Pages: 7, Size: 149.72 KB)
SIHP35N60E-GE3 Datasheet CoverSIHP35N60E-GE3 Datasheet Page 2SIHP35N60E-GE3 Datasheet Page 3SIHP35N60E-GE3 Datasheet Page 4SIHP35N60E-GE3 Datasheet Page 5SIHP35N60E-GE3 Datasheet Page 6SIHP35N60E-GE3 Datasheet Page 7

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