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2N5551G
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2N5551G


Part Number 2N5551G
Zouser Part # 2N5551G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN 160V 0.6A TO-92
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2N5551G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock581 - More on Order
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Lead-TimeCan Ship Immediately
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2N5551G Specifications

Part Number 2N5551G
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series -
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 625mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3

2N5551G Documents

2N5551G, 2N5551G Datasheet (Total Pages: 6, Size: 88.67 KB)
2N5551RL1G Datasheet Cover2N5551RL1G Datasheet Page 22N5551RL1G Datasheet Page 32N5551RL1G Datasheet Page 42N5551RL1G Datasheet Page 52N5551RL1G Datasheet Page 6

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