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2N5551RL1G Datasheet

2N5551RL1G Cover
Datasheet2N5551RL1G
File Size88.67 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 7 part numbers
Associated Parts 2N5551RL1G, 2N5551ZL1G, 2N5551RLRPG, 2N5551G, 2N5550RLRPG, 2N5550G, 2N5551RLRAG
Description TRANS NPN 160V 0.6A TO-92, TRANS NPN 160V 0.6A TO-92, TRANS NPN 160V 0.6A TO-92, TRANS NPN 160V 0.6A TO-92, TRANS NPN 140V 0.6A TO-92

2N5551RL1G - ON Semiconductor

2N5551RL1G Datasheet Page 1
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URL Link

2N5551RL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

160V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5551ZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

160V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5551RLRPG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

160V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5551G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

160V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5550RLRPG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

140V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5550G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

140V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5551RLRAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

160V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3