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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 453/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A SOT54 |
In Stock545 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A SOT54 |
In Stock464 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 500mW |
Frequency - Transition: 125MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.1A SOT54 |
In Stock454 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.1A SOT54 |
In Stock661 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.1A SOT54 |
In Stock411 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1A SOT54 |
In Stock388 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V |
Power - Max: 830mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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|
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 40V 1A SOT54 |
In Stock541 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V |
Power - Max: 830mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 15V 0.2A SOT54 |
In Stock623 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 15V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 400nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V |
Power - Max: 500mW |
Frequency - Transition: 500MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 15V 0.2A SOT54 |
In Stock351 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 15V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 400nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V |
Power - Max: 500mW |
Frequency - Transition: 500MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 15V 0.2A SOT54 |
In Stock235 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 15V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 400nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V |
Power - Max: 500mW |
Frequency - Transition: 500MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 150V 0.3A SOT23 |
In Stock267 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V |
Power - Max: 250mW |
Frequency - Transition: 300MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB (SOT23) |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 150V 0.3A SOT23 |
In Stock435 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V |
Power - Max: 250mW |
Frequency - Transition: 300MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB (SOT23) |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 15V 0.5A 5TSSOP |
In Stock421 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN + Diode (Isolated) |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 15V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V |
Power - Max: 300mW |
Frequency - Transition: 420MHz |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: 5-TSSOP |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.75A 6TSOP |
In Stock478 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP + Diode (Isolated) |
Current - Collector (Ic) (Max): 750mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V |
Power - Max: 600mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: 6-TSOP |
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|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 50V 2A SOT96-1 |
In Stock342 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN + Diode (Isolated) |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V |
Power - Max: 1W |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 2A SOT96-1 |
In Stock409 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP + Diode (Isolated) |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V |
Power - Max: 1W |
Frequency - Transition: 100MHz |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 150V 0.3A SOT323 |
In Stock413 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 300MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323-3 |
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|
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 150V 0.3A SOT323 |
In Stock329 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 300mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 300MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323-3 |
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|
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.6A TO92 |
In Stock413 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 500mW |
Frequency - Transition: 300MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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|
NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO92 |
In Stock277 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 500mW |
Frequency - Transition: 200MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.75A SC59 |
In Stock289 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 750mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V |
Power - Max: 425mW |
Frequency - Transition: 220MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 50V 3A TO92 |
In Stock466 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V |
Power - Max: 830mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.7A SC59 |
In Stock289 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 700mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V |
Power - Max: 425mW |
Frequency - Transition: 185MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 3A TO92 |
In Stock495 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V |
Power - Max: 830mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 100V 1A TO92 |
In Stock216 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V |
Power - Max: 830mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN 100V 1A TO92 |
In Stock368 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V |
Power - Max: 830mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 100V 1A TO92 |
In Stock427 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V |
Power - Max: 830mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 100V 1A TO92 |
In Stock620 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V |
Power - Max: 830mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 1A TO-92 |
In Stock472 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A |
Current - Collector Cutoff (Max): 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V |
Power - Max: 830mW |
Frequency - Transition: 200MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single TRANS PNP 45V 0.5A TO-92 |
In Stock353 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 80MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |