Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 154/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC547A A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 110A	In Stock420 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC547C A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 420A	In Stock236 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC548B A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 200A	In Stock346 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC548C A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 420A	In Stock324 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC549A A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 110A	In Stock379 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC549B A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 200A	In Stock332 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC549C A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 30V, 0.1A, 420A	In Stock512 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC550A A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 110A	In Stock226 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC550B A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 200A	In Stock449 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC550C A1G	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.1A, 420A	In Stock545 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92
BC847BQAZ	Nexperia	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A SOT1215	In Stock524 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 280mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
BC857AQAZ	Nexperia	Transistors - Bipolar (BJT) - Single TRANS PNP 45V 0.1A SOT1215	In Stock594 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 280mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-XDFN Exposed Pad	Supplier Device Package: DFN1010D-3
BC848B-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.1A SOT23-3	In Stock269 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 300mW	Frequency - Transition: 300MHz	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BC858A-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 0.1A SOT23-3	In Stock174 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 300mW	Frequency - Transition: 200MHz	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BC858AW-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 0.1A SC70-3	In Stock233 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 200mW	Frequency - Transition: 200MHz	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
BC858B-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 0.1A SOT23-3	In Stock547 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V	Power - Max: 300mW	Frequency - Transition: 200MHz	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BC858BW-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 0.1A SC70-3	In Stock496 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V	Power - Max: 200mW	Frequency - Transition: 200MHz	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
BC858C-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 0.1A SOT23-3	In Stock591 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 300mW	Frequency - Transition: 200MHz	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BC807-16 RFG	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -45V, -0.5A, 10	In Stock198 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 200nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V	Power - Max: 300mW	Frequency - Transition: 100MHz	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
BC807-25 RFG	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, PNP, -45V, -0.5A, 16	In Stock315 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 200nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V	Power - Max: 300mW	Frequency - Transition: 100MHz	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
BC817-25 RFG	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.5A, 160A	In Stock374 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V	Power - Max: 300mW	Frequency - Transition: 100MHz	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
MSD42SWT1G	ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.15A SOT323	In Stock245 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 300V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 200mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V	Power - Max: 150mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70-3 (SOT323)
BC857AM,315	Nexperia	Transistors - Bipolar (BJT) - Single TRANS PNP 45V 0.1A SOT883	In Stock530 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 150mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: DFN1006-3
BC857CM,315	Nexperia	Transistors - Bipolar (BJT) - Single TRANS PNP 45V 0.1A SOT883	In Stock307 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 150mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: DFN1006-3
BC817K-16R	Nexperia	Transistors - Bipolar (BJT) - Single BC817K-16/SOT23/TO-236AB	In Stock387 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC817K-25R	Nexperia	Transistors - Bipolar (BJT) - Single BC817K-25/SOT23/TO-236AB	In Stock387 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC817K-40R	Nexperia	Transistors - Bipolar (BJT) - Single BC817K-40/SOT23/TO-236AB	In Stock291 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC817K25WH6433XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.5A SOT323	In Stock532 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V	Power - Max: 250mW	Frequency - Transition: 170MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BC817-16 RFG	Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 45V, 0.5A, 100A	In Stock433 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V	Power - Max: 300mW	Frequency - Transition: 100MHz	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
2SA1832-GR,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A SSM	In Stock362 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V	Power - Max: 100mW	Frequency - Transition: 80MHz	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM