Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR 189F E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3	In Stock337 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BCR 189L3 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3	In Stock260 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-4
BCR 189T E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75	In Stock315 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: PG-SC-75
BCR 191F E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3	In Stock230 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BCR 191L3 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3	In Stock350 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-4
BCR 191T E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75	In Stock273 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: PG-SC-75
BCR191WE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3	In Stock323 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BCR 192 B6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3	In Stock392 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR 192F E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3	In Stock373 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BCR 192L3 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3	In Stock489 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-4
BCR 192T E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75	In Stock352 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: PG-SC-75
BCR192WE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3	In Stock329 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BCR 196F E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3	In Stock471 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BCR 196L3 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3	In Stock163 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-4
BCR 196T E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75	In Stock586 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: PG-SC-75
BCR196WE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3	In Stock294 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BCR198B6327HTLA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3	In Stock344 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 190MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR 198F E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3	In Stock237 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 190MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BCR 198L3 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3	In Stock411 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 190MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-4
BCR 198T E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75	In Stock272 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 190MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: PG-SC-75
BCR198WE6327BTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3	In Stock594 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 190MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BCR 199F E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3	In Stock388 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BCR 199L3 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3	In Stock480 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-4
BCR 199T E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75	In Stock378 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 70mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: PG-SC-75
BCR 503 B6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3	In Stock460 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 100MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR 512 B6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3	In Stock366 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 100MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR 519 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3	In Stock353 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 100MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR 569 E6327	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3	In Stock461 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
FJY3001R	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F	In Stock307 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-89, SOT-490	Supplier Device Package: SOT-523F
FJY3003R	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F	In Stock227 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-89, SOT-490	Supplier Device Package: SOT-523F