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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 9/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP840FESDH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.6V 85GHZ 4TSFP

In Stock330

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Gain: 35dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-TSFP
MRF454
M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 211-11

In Stock367

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Manufacturer: M/A-Com Technology Solutions
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2
BFR360L3E6765XTMA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

In Stock366

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
2SC5488A-TL-H
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 7GHZ 3SSFP

In Stock316

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SSFP
2SC5226A-5-TL-E
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 7GHZ 3MCP

In Stock456

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP
BFP520FH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 45GHZ 4TSFP

In Stock222

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
BFU530WX
NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT323-3

In Stock537

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Manufacturer: NXP USA Inc.
Series: Automotive, AEC-Q101
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ USM

In Stock408

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SMINI

In Stock646

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
MT3S111TU,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF SIGE NPN BIPOLAR TRANSISTOR N

In Stock321

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain: 12.5dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: UFM
MT4S300U(TE85L,O,F
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

X34 PB-F RADIO-FREQUENCY SIGE HE

In Stock204

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 26.5GHz
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Gain: 16.9dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ
SS9018FBU
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.1GHZ TO92-3

In Stock342

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
BFS 17P E6433
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ SOT23-3

In Stock625

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFR380FH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

In Stock182

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain: 9.5dB ~ 13.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3
BFR380L3E6327XTMA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

In Stock500

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 2.1dB @ 1.8GHz
Gain: 7.5dB ~ 16.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
BFR360FH6765XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

In Stock227

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3
BFP182WH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT343-4

In Stock486

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
2SC5086-Y,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SSM

In Stock411

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
DMC506E20R
Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 20V 650MHZ SOT363

In Stock584

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Manufacturer: Panasonic Electronic Components
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
BF771E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT23-3

In Stock515

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10dB ~ 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
2SC4098T106P
Rohm Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 300MHZ UMT3

In Stock126

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 300MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
2SC5108-Y,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

TRANS RF NPN 10V 1GHZ SSM

In Stock199

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
SMMBTH10-4LT3G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 800MHZ SOT23-3

In Stock282

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
2SC4713KT146R
Rohm Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 6V 800MHZ SMT3

In Stock406

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
BFR340L3E6327XTMA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

In Stock515

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Gain: 17.5dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
55GN01FA-TL-H
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 5.5GHZ 3SSFP

In Stock299

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 11dB ~ 19dB @ 1GHz ~ 400MHz
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Supplier Device Package: 3-SSFP
2SC4618TLN
Rohm Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 300MHZ EMT3

In Stock210

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 300MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
BFR35APE6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT23-3

In Stock296

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
15GN03FA-TL-H
ON Semiconductor

Transistors - Bipolar (BJT) - RF

TRANS NPN VHF-UHF 70A 10V SSFP

In Stock435

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SSFP
BFP182RE7764HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT143R-4

In Stock554

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: PG-SOT143R-4