Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF

Records 1,506

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC4774T106S	Rohm Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 800MHZ UMT3	In Stock7,087 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 6V	Frequency - Transition: 800MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3
BFU910FX	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 9.5V SOT343F	In Stock8,367 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 9.5V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 13.5dB	Power - Max: 300mW	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Current - Collector (Ic) (Max): 15mA	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: SOT-343F
BFU730LXZ	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3V 53GHZ 3DFN1006	In Stock14,972 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 3V	Frequency - Transition: 53GHz	Noise Figure (dB Typ @ f): 0.75dB @ 6GHz	Gain: 15.8dB	Power - Max: 160mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 3-XFDFN	Supplier Device Package: 3-DFN1006 (1.0x0.6)
BFU520XRR	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 10.5GHZ SOT143R	In Stock3,657 More on Order	Manufacturer: NXP USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 10.5GHz	Noise Figure (dB Typ @ f): 0.65dB @ 900MHz	Gain: 20dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-143R	Supplier Device Package: SOT-143R
BF776H6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ SOT343-4	In Stock4,193 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 4.7V	Frequency - Transition: 46GHz	Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz	Gain: 24dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFU630F,115	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.5V 21GHZ 4DFP	In Stock7,382 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5.5V	Frequency - Transition: 21GHz	Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz	Gain: 13dB ~ 22.5dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: 4-DFP
BFU710F,115	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.8V 43GHZ 4DFP	In Stock4,378 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 2.8V	Frequency - Transition: 43GHz	Noise Figure (dB Typ @ f): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz	Gain: -	Power - Max: 136mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 2V	Current - Collector (Ic) (Max): 10mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: 4-DFP
BFQ18A,115	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 4GHZ SOT89-3	In Stock5,667 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 18V	Frequency - Transition: 4GHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 1W	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: SOT-89-3
MRF10120	M/A-Com Technology Solutions	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 355C-02	In Stock380 More on Order	Manufacturer: M/A-Com Technology Solutions	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 55V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 8.5dB	Power - Max: 120W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V	Current - Collector (Ic) (Max): 15A	Operating Temperature: 200°C (TJ)	Mounting Type: Chassis Mount	Package / Case: 355C-02	Supplier Device Package: 355C-02, Style 1
MMBTH10LT3G	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SOT23-3	In Stock12,475 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 650MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V	Current - Collector (Ic) (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 550MHZ SMINI	In Stock5,068 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 30V	Frequency - Transition: 550MHz	Noise Figure (dB Typ @ f): 2.5dB @ 100MHz	Gain: 23dB	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V	Current - Collector (Ic) (Max): 20mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: S-Mini
BFR182WH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3	In Stock4,812 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	Gain: 19dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
15GN03CA-TB-E	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 1.5GHZ 3CP	In Stock4,307 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 1.5GHz	Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz	Gain: 13dB @ 0.4GHz	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Current - Collector (Ic) (Max): 70mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: 3-CP
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 550MHZ SMINI	In Stock3,667 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 30V	Frequency - Transition: 550MHz	Noise Figure (dB Typ @ f): 2.5dB @ 100MHz	Gain: 23dB	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V	Current - Collector (Ic) (Max): 20mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: S-Mini
15GN03MA-TL-E	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 1.5GHZ 3MCP	In Stock3,751 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 1.5GHz	Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz	Gain: 13dB @ 0.4GHz	Power - Max: 400mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Current - Collector (Ic) (Max): 70mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: 3-MCP
55GN01MA-TL-E	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 5.5GHZ 3MCP	In Stock4,413 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 4.5GHz ~ 5.5GHz	Noise Figure (dB Typ @ f): 1.9dB @ 1GHz	Gain: 10dB @ 1GHz	Power - Max: 400mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Current - Collector (Ic) (Max): 70mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: 3-MCP
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 4GHZ USM	In Stock4,747 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5V	Frequency - Transition: 4GHz	Noise Figure (dB Typ @ f): 2.4dB @ 1GHz	Gain: 4.5dBi	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V	Current - Collector (Ic) (Max): 60mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 550MHZ USM	In Stock15,461 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 30V	Frequency - Transition: 550MHz	Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz	Gain: 17dB ~ 23dB	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V	Current - Collector (Ic) (Max): 20mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USM	In Stock4,038 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1.1dB @ 1GHz	Gain: 12dB ~ 17dB	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
NSVMMBTH10LT1G	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SOT23	In Stock4,298 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 650MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V	Current - Collector (Ic) (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
ON5087,115	NXP	Transistors - Bipolar (BJT) - RF RF TRANSPONDER SOT343F	In Stock5,106 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: -	Voltage - Collector Emitter Breakdown (Max): -	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Current - Collector (Ic) (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: SOT-343F
ON5089,115	NXP	Transistors - Bipolar (BJT) - RF RF TRANSPONDER SOT343F	In Stock4,731 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: -	Voltage - Collector Emitter Breakdown (Max): -	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Current - Collector (Ic) (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: SOT-343F
MCH4020-TL-H	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 8V 16GHZ 4MCPH	In Stock7,673 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 8V	Frequency - Transition: 16GHz	Noise Figure (dB Typ @ f): 1.2dB @ 1GHz	Gain: 17.5dB @ 1GHz	Power - Max: 400mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: 4-MCPH
MCH4015-TL-H	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 10GHZ 4MCPH	In Stock4,719 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 10GHz	Noise Figure (dB Typ @ f): 1.2dB @ 1GHz	Gain: 17dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-343F	Supplier Device Package: 4-MCPH
NSVF4015SG4T1G	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 10GHZ SC82FL/	In Stock4,248 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 10GHz	Noise Figure (dB Typ @ f): 1.2dB @ 1GHz	Gain: 17dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, Flat Leads	Supplier Device Package: SC-82FL/MCPH4
BFT25,215	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 2.3GHZ TO236AB	In Stock4,857 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5V	Frequency - Transition: 2.3GHz	Noise Figure (dB Typ @ f): 5.5dB @ 500MHz	Gain: -	Power - Max: 30mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V	Current - Collector (Ic) (Max): 6.5mA	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB (SOT23)
MT3S113TU,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.3V 11.2GHZ UFM	In Stock4,759 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5.3V	Frequency - Transition: 11.2GHz	Noise Figure (dB Typ @ f): 1.45dB @ 1GHz	Gain: 12.5dB	Power - Max: 900mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, Flat Leads	Supplier Device Package: UFM
MT3S113(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.3V 12.5GHZ SMINI	In Stock4,894 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5.3V	Frequency - Transition: 12.5GHz	Noise Figure (dB Typ @ f): 1.45dB @ 1GHz	Gain: 11.8dB	Power - Max: 800mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: S-Mini
KSC1674YBU	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3	In Stock12,025 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: 600MHz	Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz	Gain: -	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V	Current - Collector (Ic) (Max): 20mA	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package: TO-92-3
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 8GHZ PW-MINI	In Stock8,361 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 6V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1.25dB @ 1GHz	Gain: 10.5dB	Power - Max: 1W	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: PW-MINI