Bipolar (BJT) - Arrays

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays

Records 1,432

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N3811	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78	In Stock213 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JAN2N3811L	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78	In Stock521 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JANTX2N3811	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78	In Stock589 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JANTX2N3811L	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A	In Stock544 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JANTX2N3811U	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A	In Stock287 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JANTX2N6988	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4PNP 60V 0.6A	In Stock299 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/558	Transistor Type: 4 PNP (Quad)	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 400mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 14-Flatpack	Supplier Device Package: 14-Flatpack
JANTX2N6990	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A	In Stock519 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/559	Transistor Type: 4 NPN (Quad)	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 400mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 14-Flatpack	Supplier Device Package: 14-Flatpack
JANTXV2N3811	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78	In Stock250 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JANTXV2N3811L	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A	In Stock473 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JANTXV2N3811U	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A	In Stock462 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/336	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
2N3811	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78	In Stock324 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
2N3811L	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78	In Stock593 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
2N3811U	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78	In Stock492 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V	Power - Max: 350mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
2N6989	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A TO116	In Stock377 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: 4 NPN (Quad)	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 1.5W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: 14-DIP (0.300", 7.62mm)	Supplier Device Package: TO-116
SG2013J-883B	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.6A 16JDIP	In Stock496 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: 7 NPN Darlington	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 900 @ 500mA, 2V	Power - Max: -	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: -	Supplier Device Package: 16-CDIP
SG2023J-883B	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 95V 0.5A 16JDIP	In Stock645 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: 7 NPN Darlington	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 95V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V	Power - Max: -	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: -	Supplier Device Package: 16-CDIP
2N6989UTX	TT Electronics/Optek Technology	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A SMT	In Stock310 More on Order	Manufacturer: TT Electronics/Optek Technology	Series: -	Transistor Type: 4 NPN (Quad)	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 20-CLCC	Supplier Device Package: 20-CLCC
HN2C01FE-GR(T5L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A ES6	In Stock415 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: 2 NPN (Dual)	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V	Power - Max: 100mW	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
HN1C01FU-Y(T5L,F,T	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A US6	In Stock321 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: 2 NPN (Dual)	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V	Power - Max: 200mW	Frequency - Transition: 80MHz	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
HN2A01FE-GR(TE85LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6	In Stock331 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V	Power - Max: 100mW	Frequency - Transition: 800MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
HN2A01FE-Y(TE85L,F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6	In Stock448 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V	Power - Max: 100mW	Frequency - Transition: 80MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6
HN1B04F(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 30V 0.5A SM6	In Stock492 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN, PNP	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V	Power - Max: 300mW	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SM6
HN1B01F-GR(TE85L,F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A SM6	In Stock457 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN, PNP	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V	Power - Max: 300mW	Frequency - Transition: 120MHz	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SM6
HN1A01F-GR(TE85L,F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A SM6	In Stock112 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 150mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V	Power - Max: 300mW	Frequency - Transition: 80MHz	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SM6
MCH6536-TL-E	ON Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 15V/12V 6MCPH	In Stock452 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN, PNP	Current - Collector (Ic) (Max): 700mA, 500mA	Voltage - Collector Emitter Breakdown (Max): 15V, 12V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V	Power - Max: 550mW	Frequency - Transition: 330MHz, 490MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: 6-MCPH
JANTX2N5794	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 40V 0.6A TO-78	In Stock333 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/495	Transistor Type: 2 NPN (Dual)	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 600mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-78-6 Metal Can	Supplier Device Package: TO-78-6
JANTX2N5796U	Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.6A U-PKG	In Stock474 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/496	Transistor Type: 2 PNP (Dual)	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 600mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-SMD, No Lead	Supplier Device Package: 6-SMD
SSM2220SZ-REEL	Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 36V 0.02A 8SOIC	In Stock328 More on Order	Manufacturer: Analog Devices Inc.	Series: -	Transistor Type: 2 PNP (Dual) Matched Pair	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 36V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 36V	Power - Max: -	Frequency - Transition: -	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
MPQ2222A	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 40V 0.5A	In Stock267 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: 4 NPN (Quad)	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 650mW	Frequency - Transition: 200MHz	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: 14-DIP (0.300", 7.62mm)	Supplier Device Package: TO-116
MPQ2483	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 40V	In Stock594 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: 4 NPN (Quad)	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 20nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: 3W	Frequency - Transition: 50MHz	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: 14-DIP (0.300", 7.62mm)	Supplier Device Package: TO-116

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