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Part Number	Description	In Stock
DTB123TCT116 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP -500MA/-50V DIGITAL TRANSIST Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	In Stock258 More on Order
DTB123TKT146 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock382 More on Order
DTB123YCHZGT116 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP -500MA -50V DIGITAL TRANSIST Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased + Diode Current - Collector (Ic) (Max): 500mA Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	In Stock334 More on Order
DTB123YCT116 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP -500MA/-50V DIGITAL TRANSIST Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	In Stock4,299 More on Order
DTB123YKT146 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock267 More on Order
DTB123YUT106 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW UMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	In Stock3,651 More on Order
DTB143ECHZGT116 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased -500MA/-50V DIGITAL TRANSISTOR ( Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased + Diode Current - Collector (Ic) (Max): 500mA Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	In Stock417 More on Order
DTB143ECT116 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP -500MA/-50V DIGITAL TRANSIST Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	In Stock471 More on Order
DTB143ECT216 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MA SC59 Manufacturer: Rohm Semiconductor Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	In Stock146 More on Order
DTB143EKT146 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock4,315 More on Order
DTB143ESTP Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SPT Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	In Stock269 More on Order
DTB143TKT146 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	In Stock500 More on Order
DTB513ZETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock4,017 More on Order
DTB513ZMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock446 More on Order
DTB523YETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock231 More on Order
DTB523YMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock526 More on Order
DTB543EETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock510 More on Order
DTB543EMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock535 More on Order
DTB543XMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock358 More on Order
DTB543ZETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock306 More on Order
DTB713ZETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock286 More on Order
DTB713ZMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock12,529 More on Order
DTB723YETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock222 More on Order
DTB723YMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock266 More on Order
DTB743EETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock623 More on Order
DTB743EMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock478 More on Order
DTB743XETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock254 More on Order
DTB743XMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock423 More on Order
DTB743ZETL Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock507 More on Order
DTB743ZMT2L Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3 Manufacturer: Rohm Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	In Stock568 More on Order