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Bipolar (BJT) - Arrays (1,432)
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Part Number	Description	In Stock
JANTX2N718A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.5A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/181 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock289 More on Order
JANTX2N720A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/182 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock275 More on Order
JANTX2N7370 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 12A TO254 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/624 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 100W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	In Stock462 More on Order
JANTX2N7373 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 5A TO254 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/613 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 4W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	In Stock371 More on Order
JANTX2N918 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V 0.05A Manufacturer: Microsemi Corporation Series: *	In Stock259 More on Order
JANTX2N918UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/301 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Power - Max: 200mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	In Stock276 More on Order
JANTX2N930 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.03A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/253 Transistor Type: NPN Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 300mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock578 More on Order
JANTXN3251AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.2A TO-39 Manufacturer: Microsemi Corporation	In Stock149 More on Order
JANTXV2N1613L Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.5A TO-5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/181 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock421 More on Order
JANTXV2N1893 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/182 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock272 More on Order
JANTXV2N1893S Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/182 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 3W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock462 More on Order
JANTXV2N2218 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock298 More on Order
JANTXV2N2218A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock359 More on Order
JANTXV2N2218AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock450 More on Order
JANTXV2N2219 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD	In Stock591 More on Order
JANTXV2N2219A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD	In Stock355 More on Order
JANTXV2N2219AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock458 More on Order
JANTXV2N2221A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock265 More on Order
JANTXV2N2221AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock188 More on Order
JANTXV2N2221AUA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	In Stock476 More on Order
JANTXV2N2222A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock237 More on Order
JANTXV2N2222AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock480 More on Order
JANTXV2N2222AUA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD	In Stock386 More on Order
JANTXV2N2222AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock348 More on Order
JANTXV2N2369A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/317 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	In Stock602 More on Order
JANTXV2N2369AUA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/317 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	In Stock429 More on Order
JANTXV2N2369AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V 4UB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/317 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	In Stock192 More on Order
JANTXV2N2432A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A TO-18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/313 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 300mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock437 More on Order
JANTXV2N2484 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/376 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock454 More on Order
JANTXV2N2484UA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/376 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	In Stock434 More on Order