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Part Number	Description	In Stock
IRG7CH73UED-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock594 More on Order
IRG7CH73UEF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Input Type: Standard Gate Charge: 540nC Td (on/off) @ 25°C: 90ns/580ns Test Condition: 600V, 75A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock256 More on Order
IRG7CH75K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock544 More on Order
IRG7CH75K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 1.53V @ 15V, 20A Input Type: Standard Gate Charge: 500nC Td (on/off) @ 25°C: 120ns/445ns Test Condition: 600V, 100A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock416 More on Order
IRG7CH75UED-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock267 More on Order
IRG7CH75UEF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Input Type: Standard Gate Charge: 770nC Td (on/off) @ 25°C: 120ns/890ns Test Condition: 600V, 100A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock334 More on Order
IRG7CH81K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock602 More on Order
IRG7CH81K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A Input Type: Standard Gate Charge: 745nC Td (on/off) @ 25°C: 70ns/330ns Test Condition: 600V, 150A, 1Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock406 More on Order
IRG7PG35U-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 55A 210W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock462 More on Order
IRG7PG35UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 55A 210W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock553 More on Order
IRG7PG42UD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 85A 320W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock484 More on Order
IRG7PG42UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 85A 320W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock270 More on Order
IRG7PH28UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 115W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: 115W Switching Energy: 543µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: -/229ns Test Condition: 600V, 15A, 22Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock528 More on Order
IRG7PH28UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 115W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: 115W Switching Energy: 543µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: -/229ns Test Condition: 600V, 15A, 22Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock508 More on Order
IRG7PH28UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A TO247 Manufacturer: Infineon Technologies	In Stock614 More on Order
IRG7PH30K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 180W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Power - Max: 180W Switching Energy: 530µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 14ns/110ns Test Condition: 600V, 9A, 22Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock167 More on Order
IRG7PH30K10PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 33A 210W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Power - Max: 210W Switching Energy: 530µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 14ns/110ns Test Condition: 600V, 9A, 22Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock521 More on Order
IRG7PH35UD1-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock442 More on Order
IRG7PH35UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock490 More on Order
IRG7PH35UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock316 More on Order
IRG7PH35UD-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A COPAK247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 180W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock468 More on Order
IRG7PH35UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 180W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 180W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock500 More on Order
IRG7PH35U-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 55A TO247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock469 More on Order
IRG7PH35U-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST TO247 Manufacturer: Infineon Technologies Series: *	In Stock500 More on Order
IRG7PH35UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 55A 210W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock486 More on Order
IRG7PH37K10D-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 216W TO247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 216W Switching Energy: 1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 50ns/240ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock484 More on Order
IRG7PH37K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 216W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 216W Switching Energy: 1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 50ns/240ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock369 More on Order
IRG7PH42UD1-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A COPAK247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock423 More on Order
IRG7PH42UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 313W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock329 More on Order
IRG7PH42UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 313W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock492 More on Order