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Part Number	Description	In Stock
IRG4BC20KD Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock487 More on Order
IRG4BC20KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock310 More on Order
IRG4BC20KD-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock322 More on Order
IRG4BC20KD-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock866 More on Order
IRG4BC20KDSTRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock1,800 More on Order
IRG4BC20KD-STRR Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock399 More on Order
IRG4BC20KDSTRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock221 More on Order
IRG4BC20KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 150µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 480V, 9A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock457 More on Order
IRG4BC20K-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 150µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 480V, 9A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock337 More on Order
IRG4BC20K-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 150µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 480V, 9A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock363 More on Order
IRG4BC20K-STRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 150µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 480V, 9A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock295 More on Order
IRG4BC20K-STRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 150µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 480V, 9A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock593 More on Order
IRG4BC20MDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 18A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A Power - Max: 60W Switching Energy: 410µJ (on), 2.03mJ (off) Input Type: Standard Gate Charge: 39nC Td (on/off) @ 25°C: 21ns/463ns Test Condition: 480V, 11A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock211 More on Order
IRG4BC20MD-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 18A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A Power - Max: 60W Switching Energy: 410µJ (on), 2.03mJ (off) Input Type: Standard Gate Charge: 39nC Td (on/off) @ 25°C: 21ns/463ns Test Condition: 480V, 11A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock341 More on Order
IRG4BC20S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 19A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 120µJ (on), 2.05mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 27ns/540ns Test Condition: 480V, 10A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock290 More on Order
IRG4BC20SD Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 19A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 320µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 62ns/690ns Test Condition: 480V, 10A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock668 More on Order
IRG4BC20SDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 19A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 320µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 62ns/690ns Test Condition: 480V, 10A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock125 More on Order
IRG4BC20SD-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 19A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 320µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 62ns/690ns Test Condition: 480V, 10A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock160 More on Order
IRG4BC20SD-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 19A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 320µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 62ns/690ns Test Condition: 480V, 10A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock414 More on Order
IRG4BC20SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 19A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 120µJ (on), 2.05mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 27ns/540ns Test Condition: 480V, 10A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock3,236 More on Order
IRG4BC20U Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 100µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 21ns/86ns Test Condition: 480V, 6.5A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock345 More on Order
IRG4BC20UD Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock390 More on Order
IRG4BC20UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock515 More on Order
IRG4BC20UD-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock366 More on Order
IRG4BC20UD-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock258 More on Order
IRG4BC20UD-STRL Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock292 More on Order
IRG4BC20UDSTRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock429 More on Order
IRG4BC20UD-STRR Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock225 More on Order
IRG4BC20UDSTRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 39ns/93ns Test Condition: 480V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock170 More on Order
IRG4BC20UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 100µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 21ns/86ns Test Condition: 480V, 6.5A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock395 More on Order