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Diodes & Rectifiers

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HT16G R0G
HT16G R0G

Taiwan Semiconductor Corporation

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 1A TS-1

  • Manufacturer: Taiwan Semiconductor Corporation
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock660

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HT17G A0G
HT17G A0G

Taiwan Semiconductor Corporation

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 800V 1A TS-1

  • Manufacturer: Taiwan Semiconductor Corporation
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock518

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HT17G A1G
HT17G A1G

Taiwan Semiconductor Corporation

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 800V 1A TS-1

  • Manufacturer: Taiwan Semiconductor Corporation
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock551

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HT17G R0G
HT17G R0G

Taiwan Semiconductor Corporation

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 800V 1A TS-1

  • Manufacturer: Taiwan Semiconductor Corporation
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock328

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HT18G A0G
HT18G A0G

Taiwan Semiconductor Corporation

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 1A TS-1

  • Manufacturer: Taiwan Semiconductor Corporation
  • Diode Type: Standard
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock521

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HT18G A1G
HT18G A1G

Taiwan Semiconductor Corporation

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 1A TS-1

  • Manufacturer: Taiwan Semiconductor Corporation
  • Diode Type: Standard
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock298

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HT18G R0G
HT18G R0G

Taiwan Semiconductor Corporation

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 1A TS-1

  • Manufacturer: Taiwan Semiconductor Corporation
  • Diode Type: Standard
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock332

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HU10260
HU10260

Microsemi

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 100A HALFPAK

  • Manufacturer: Microsemi Corporation
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
In Stock337

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HU10260R
HU10260R

Microsemi

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 100A HALFPAK

  • Manufacturer: Microsemi Corporation
  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
In Stock243

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HU20260
HU20260

Microsemi

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 200A HALFPAK

  • Manufacturer: Microsemi Corporation
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 130ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
In Stock316

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HU20260R
HU20260R

Microsemi

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 200A HALFPAK

  • Manufacturer: Microsemi Corporation
  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 130ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
In Stock305

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IDB06S60C
IDB06S60C

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE SCHOTTKY 600V 6A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 80µA @ 600V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock283

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IDB06S60CATMA2
IDB06S60CATMA2

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE SCHOTTKY 600V 6A TO263-3-2

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 80µA @ 600V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
In Stock434

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IDB09E60ATMA1
IDB09E60ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 19.3A TO263

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 19.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock438

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IDB10S60C
IDB10S60C

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE SILICON 600V 10A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 140µA @ 600V
  • Capacitance @ Vr, F: 480pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock149

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IDB10S60CATMA2
IDB10S60CATMA2

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE SCHOTTKY 600V 10A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 140µA @ 600V
  • Capacitance @ Vr, F: 480pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock366

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IDB12E120ATMA1
IDB12E120ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 1.2KV 28A TO263-3

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 28A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock486

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IDB15E60
IDB15E60

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 29.2A TO263

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 29.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 87ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock235

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IDB15E60ATMA1
IDB15E60ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 29.2A TO263

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 29.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 87ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -40°C ~ 175°C
In Stock522

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IDB18E120ATMA1
IDB18E120ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 1.2KV 31A TO263-3

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 31A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 195ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock491

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IDB23E60ATMA1
IDB23E60ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 41A TO263-3

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 41A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 23A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock492

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IDB30E120ATMA1
IDB30E120ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 1.2KV 50A TO263-3

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 50A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 243ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -55°C ~ 150°C
In Stock278

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IDB30E60ATMA1
IDB30E60ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 52.3A TO263

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 52.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 126ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -40°C ~ 175°C
In Stock563

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IDB45E60ATMA1
IDB45E60ATMA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 600V 71A TO263-3

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 71A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 45A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock343

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IDC04S60CEX1SA1
IDC04S60CEX1SA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE SIC 600V 4A SAWN WAFER

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock469

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IDC04S60CEX7SA1
IDC04S60CEX7SA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURPOSE SAWN WAFER

  • Manufacturer: Infineon Technologies
  • Series: *
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
In Stock382

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IDC05S120C5X1SA1
IDC05S120C5X1SA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

IC DIODE EMITTER CTLR WAFER

  • Manufacturer: Infineon Technologies
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
In Stock379

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IDC05S60CEX1SA1
IDC05S60CEX1SA1

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE SIC 600V 5A SAWN WAFER

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 70µA @ 600V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock555

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IDC08D120T6MX1SA2
IDC08D120T6MX1SA2

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE GEN PURP 1.2KV 10A WAFER

  • Manufacturer: Infineon Technologies
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.05V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr: 2.7µA @ 1200V
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
In Stock349

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IDC08S120EX1SA3
IDC08S120EX1SA3

Infineon Technologies

Diodes & Rectifiers - Rectifiers - Single

DIODE SCHOTTKY 1.2KV 7.5A WAFER

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 7.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 180µA @ 1200V
  • Capacitance @ Vr, F: 380pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 175°C
In Stock475

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