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TSM60NB190CI C0G


Part Number TSM60NB190CI C0G
Zouser Part # TSM60NB190CI-C0G
Manufacturer Taiwan Semiconductor Corporation
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 18A ITO220
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TSM60NB190CI C0G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock4,770 - More on Order
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TSM60NB190CI C0G Specifications

Part Number TSM60NB190CI C0G
Brand Taiwan Semiconductor Corporation
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Taiwan Semiconductor Corporation
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V
FET Feature -
Power Dissipation (Max) 33.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab

TSM60NB190CI C0G Documents

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