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TPN2R805PL,L1Q


Part Number TPN2R805PL,L1Q
Zouser Part # TPN2R805PL-L1Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description X35 PB-F POWER MOSFET TRANSISTOR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPN2R805PL,L1Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock410 - More on Order
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TPN2R805PL,L1Q Specifications

Part Number TPN2R805PL,L1Q
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) @ 25°C 139A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3.2nF @ 22.5V
FET Feature -
Power Dissipation (Max) 2.67W (Ta), 104W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN

TPN2R805PL,L1Q Documents

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