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TK4A60DB(STA4,Q,M)


Part Number TK4A60DB(STA4,Q,M)
Zouser Part # TK4A60DB-STA4-Q-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 3.7A TO-220SIS
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TK4A60DB(STA4,Q,M) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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TK4A60DB(STA4,Q,M) Specifications

Part Number TK4A60DB(STA4,Q,M)
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

TK4A60DB(STA4,Q,M) Documents

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