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SPI21N10
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SPI21N10


Part Number SPI21N10
Zouser Part # SPI21N10
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 21A TO-262
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SPI21N10 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock260 - More on Order
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SPI21N10 Specifications

Part Number SPI21N10
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs 38.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 25V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

SPI21N10 Documents

SPI21N10, SPI21N10 Datasheet (Total Pages: 8, Size: 512.7 KB)
SPI21N10 Datasheet CoverSPI21N10 Datasheet Page 2SPI21N10 Datasheet Page 3SPI21N10 Datasheet Page 4SPI21N10 Datasheet Page 5SPI21N10 Datasheet Page 6SPI21N10 Datasheet Page 7SPI21N10 Datasheet Page 8

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