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SIHW33N60E-GE3


Part Number SIHW33N60E-GE3
Zouser Part # SIHW33N60E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 33A TO-247AD
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHW33N60E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock182 - More on Order
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SIHW33N60E-GE3 Specifications

Part Number SIHW33N60E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-3P-3 Full Pack

SIHW33N60E-GE3 Documents

SIHW33N60E-GE3, SIHW33N60E-GE3 Datasheet (Total Pages: 8, Size: 324.82 KB)
SIHW33N60E-GE3 Datasheet CoverSIHW33N60E-GE3 Datasheet Page 2SIHW33N60E-GE3 Datasheet Page 3SIHW33N60E-GE3 Datasheet Page 4SIHW33N60E-GE3 Datasheet Page 5SIHW33N60E-GE3 Datasheet Page 6SIHW33N60E-GE3 Datasheet Page 7SIHW33N60E-GE3 Datasheet Page 8

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