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SIHP25N50E-GE3


Part Number SIHP25N50E-GE3
Zouser Part # SIHP25N50E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 500V 26A TO-220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHP25N50E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock2,146 - More on Order
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SIHP25N50E-GE3 Specifications

Part Number SIHP25N50E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1980pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

SIHP25N50E-GE3 Documents

SIHP25N50E-GE3, SIHP25N50E-GE3 Datasheet (Total Pages: 8, Size: 281.81 KB)
SIHP25N50E-GE3 Datasheet CoverSIHP25N50E-GE3 Datasheet Page 2SIHP25N50E-GE3 Datasheet Page 3SIHP25N50E-GE3 Datasheet Page 4SIHP25N50E-GE3 Datasheet Page 5SIHP25N50E-GE3 Datasheet Page 6SIHP25N50E-GE3 Datasheet Page 7SIHP25N50E-GE3 Datasheet Page 8

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