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SIHH11N65E-T1-GE3


Part Number SIHH11N65E-T1-GE3
Zouser Part # SIHH11N65E-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHAN 650V 12A POWERPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHH11N65E-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SIHH11N65E-T1-GE3 Specifications

Part Number SIHH11N65E-T1-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 363mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1257pF @ 100V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN

SIHH11N65E-T1-GE3 Documents

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